MT18HTF12872AY-667F1 Micron Technology Inc, MT18HTF12872AY-667F1 Datasheet - Page 13

• Manufacturer Part Number: MT18HTF12872AY-667F1
• Manufacturer: Micron Technology Inc

Specifications of MT18HTF12872AY-667F1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240UDIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 45ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.683A
• Number Of Elements: 18
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 85C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / Rohs Status: Compliant

Table 15:
PDF: 09005aef80e8ad4d/Source: 09005aef80e785e6
HTF18C64_128_256_512x72A.fm - Rev. H 5/08 EN
Parameter/Condition
Operating one bank active-precharge current:
t
valid commands; Address bus inputs are switching; Data bus inputs are
switching
Operating one bank active-read-precharge current: I
BL = 4, CL = CL (I
(I
Address bus inputs are switching; Data pattern is same as I
Precharge power-down current: All device banks idle;
CKE is LOW; Other control and address bus inputs are stable; Data bus
inputs are floating
Precharge quiet standby current: All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable;
Data bus inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Data
bus inputs are switching
Active power-down current: All device banks open;
t
bus inputs are stable; Data bus inputs are floating
Active standby current: All device banks open;
t
valid commands; Other control and address bus inputs are switching; Data
bus inputs are switching
Operating burst write current: All device banks open; Continuous burst
writes; BL = 4, CL = CL (I
t
bus inputs are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst
reads; I
t
valid commands; Address bus inputs are switching; Data bus inputs are
switching
Burst refresh current:
t
Other control and address bus inputs are switching; Data bus inputs are
switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current: All device banks interleaving
reads; I
t
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during DESELECTs; Data bus inputs are switching
RC =
CK =
RAS =
RP =
RAS =
RFC (I
CK =
DD
),
t
t
t
t
t
RP (I
DD
RC (I
RCD =
CK (I
CK (I
t
t
OUT
OUT
RAS MAX (I
RAS MAX (I
) interval; CKE is HIGH, S# is HIGH between valid commands;
DD
= 0mA; BL = 4, CL = CL (I
DD
DD
= 0mA; BL = 4, CL = CL (I
DD
t
); CKE is HIGH, S# is HIGH between valid commands; Address
),
DDR2 I
Values shown for MT47H256M8 DDR2 SDRAM only and are computed from values specified in the
2Gb (256 Meg x 8) component data sheet
RCD (I
); CKE is LOW; Other control and address
),
t
t
DD
RAS =
RC =
), AL = 0;
Notes:
DD
DD
DD
t
),
),
DD
RC (I
); CKE is HIGH, S# is HIGH between valid commands;
t
RAS MIN (I
t
DD
t
RP =
RP =
t
CK =
Specifications and Conditions – 4GB
), AL = 0;
DD
t
1. Value calculated as one module rank in this operating condition and all other module ranks
2. Value calculated reflects all module ranks in this operating condition.
CK =
512MB, 1GB, 2GB, 4GB (x72, DR, ECC) 240-Pin DDR2 SDRAM UDIMM
),
t
t
RP (I
RP (I
t
CK (I
t
in I
RRD =
t
DD
CK (I
DD
DD
DD
DD
t
DD
DD
CK =
); CKE is HIGH, S# is HIGH between
2P (CKE LOW).
); CKE is HIGH, S# is HIGH between
); CKE is HIGH, S# is HIGH between
), AL =
), AL = 0;
); REFRESH command at every
t
DD
RRD (I
),
t
CK (I
t
RC =
t
RCD (I
DD
DD
t
),
CK =
t
RC (I
),
t
t
RCD =
CK =
t
DD
t
RAS =
CK =
t
CK =
t
DD
) - 1 ×
CK (I
t
),
CK (I
t
t
t
RCD (I
OUT
t
CK (I
CK =
t
t
DD
RAS =
DD
t
CK (I
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
RAS MAX (I
CK =
13
t
CK (I
4W
DD
),
= 0mA;
DD
t
),
DD
DD
CK (I
t
t
),
DD
CK (I
RAS MIN
); CKE is
); CKE is
);
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
DD
);
);
),
Symbol
I
I
I
I
I
I
I
DD
DD
DD
DD
I
I
DD
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
2P
3P
4R
0
1
5
6
7
1
1
2
2
1
2
2
1
2
2
2
1
-80E/-
800
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Electrical Specifications
1,080
1,413 1,233 1,188
1,593 1,413 13,23
5,040 4,680 4,500
-667
1368
963
144
990
720
180
990
144
©2003 Micron Technology, Inc. All rights reserved.
72
-53E
1008
873
144
810
900
630
180
810
144
72
1008
-40E Units
873
144
720
810
540
180
720
144
72
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA