MT9HVF6472PKY-667D4 Micron Technology Inc, MT9HVF6472PKY-667D4 Datasheet
MT9HVF6472PKY-667D4
Specifications of MT9HVF6472PKY-667D4
Related parts for MT9HVF6472PKY-667D4
MT9HVF6472PKY-667D4 Summary of contents
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... MT9HVF12872(P)K – 1GB For component data sheets, refer to Micron’s Web site: Features • 244-pin, very low profile mini registered dual in-line memory module (VLP Mini-RDIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 512MB (64 Meg x 72) or 1GB (128 Meg x 72) • ...
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... Table 2: Addressing Refresh count Row address Device bank address Device page size per bank Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters – 512MB Modules Base device: MT47H64M8, Module 2 Part Number Density MT9HVF6472(P)KY-80E__ 512MB MT9HVF6472(P)KY-800__ 512MB ...
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Pin Assignments and Descriptions Table 5: Pin Assignments 244-Pin VLP Mini-RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol REF DQ24 DQ0 34 DQ25 65 4 DQ1 ...
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... CB0–CB7 I/O Check bits. (SSTL_18) SDA I/O Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and (SSTL_18) data into and out of the presence-detect portion of the module Output Parity error found on the address and control bus (open drain) V ...
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Table 6: Pin Descriptions (continued) Symbol Type V Supply SSTL_18 reference voltage. REF V Supply Ground Supply Serial EEPROM positive power supply: +1.7V to +3.6V. DDSPD NC – No connect: These pins should be left unconnected. RFU – ...
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Functional Block Diagram Figure 2: Functional Block Diagram RS0# DQS0 DQS0# DM0/DQS9 NC/DQS9# DQS1 DQS1# DM1/DQS10 NC/DQS10# DQS2 DQS2# DM2/DQS11 NC/DQS11# DQS3 DQS3# DM3/DQS12 NC/DQS12# DQS8 DQS8# DM8/DQS17 NC/DQS17# S0# BA0–BA1/BA2 A0–A15 RAS# CAS# WE# CKE0 ODT0 ...
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... DDR2 SDRAM modules incorporate serial presence-detect (SPD). The SPD function is implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes are programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...
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... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions above those indicated in each device’s data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli- ability ...
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I Specifications DD Table 9: I Specifications and Conditions – 512MB DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge ...
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Table 10: I Specifications and Conditions – 1GB DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current ...
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... Timing and switching specifications for the register listed above are critical for proper oper- ation of the DDR2 SDRAM registered DIMMs. These are meant subset of the param- eters for the specific device used on the module. Detailed information for this register is available in JEDEC standard JESD82. ...
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Table 12: PLL Specifications CU877 device or equivalent JESD82-8.01 Parameter Symbol DC high-level input V IH voltage DC low-level input V IL voltage V Input voltage (limits high-level input V IH voltage V DC low-level input IL voltage ...
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Table 14: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current: ...
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... Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on assembly 4 Number of column addresses on assembly 5 DIMM height and module ranks 6 Module data width 7 Reserved 8 Module voltage interface levels t 9 SDRAM cycle time, CK (CL = MAX value, see byte 18) ...
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... Byte Description 27 MIN row precharge time, 28 MIN row active-to-row active, 29 MIN RAS#-to-CAS# delay, 30 MIN active-to-precharge time, 31 Module rank density 32 Address and command setup time, 33 Address and command hold time, 34 Data/data mask input setup time, 35 Data/data mask input hold time Write recovery time, ...
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... Description 63 Checksum for bytes 0–62 ECC/ECC and parity 64 Manufacturer’s JEDEC ID code 65–71 Manufacturer’s JEDEC ID code 72 Manufacturing location 73–90 Module part number (ASCII) 91 PCB identification code 92 Identification code (continued) 93 Year of manufacture in BCD 94 Week of manufacture in BCD 95–98 Module serial number 99–127 Reserved for manufacturer-specific data 128– ...
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... U10 U11 U12 3.60 (0.142) TYP 38.40 (1.512) TYP ® their respective owners. Micron Technology, Inc., reserves the right to change products or specifications without notice. 17 Module Dimensions 3.80 (0.150) U7 18.30 (0.720) 18.10 (0.713) 10.00 (0.394) TYP 1.10 (0.043) 0.90 (0.035) PIN 122 PIN 123 © ...