MT4VDDT3264AY-335F1 Micron Technology Inc, MT4VDDT3264AY-335F1 Datasheet

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MT4VDDT3264AY-335F1

Manufacturer Part Number
MT4VDDT3264AY-335F1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT4VDDT3264AY-335F1

Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184UDIMM
Device Core Size
64b
Organization
32Mx64
Total Density
256MByte
Chip Density
512Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
780mA
Number Of Elements
4
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Compliant
DDR SDRAM UDIMM
MT4VDDT1664A – 128MB
MT4VDDT3264A – 256MB
For component data sheets, refer to Micron’s Web site:
Features
• 184-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 128MB (16 Meg x 64) or 256MB (32 Meg x 64)
• Vdd = Vddq = +2.5V
• VddSPD = +2.3V to +3.6V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined, 2n-prefetch double data rate
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Single rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Gold edge contacts
Table 1:
PDF: 09005aef8085081a/Source: 09005aef806e129d
DD4C16_32x64A.fm - Rev. E 11/08 EN
(UDIMM)
(-40B: Vdd = Vddq = +2.6V)
(DDR) architecture
received with data—that is, source-synchronous
data capture
operation
maximum average periodic refresh interval
compatibility
Speed
Grade
-26A
-40B
-335
-262
-265
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Notes:
Industry
PC3200
PC2700
PC2100
PC2100
PC2100
1. The values of
actual DDR SDRAM device specifications are 15ns.
CL = 3
400
t
RCD and
128MB, 256MB (x64, SR) 184-Pin DDR SDRAM UDIMM
Data Rate (MT/s)
CL = 2.5
t
www.micron.com
RP for -335 modules show 18ns to align with industry specifications;
333
333
266
266
266
1
Figure 1:
Notes: 1. Contact Micron for industrial temperature
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
PCB height: 31.75mm (1.25in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 184-pin DIMM (standard)
– 184-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
CL = 2
266
266
200
200
200
Micron Technology, Inc., reserves the right to change products or specifications without notice.
module offerings.
184-Pin UDIMM (MO-206)
t
(ns)
RCD
15
18
20
20
20
A
A
1
≤ +85°C)
≤ +70°C)
(ns)
t
15
18
20
20
20
RP
©2003 Micron Technology, Inc. All rights reserved.
1
1
(ns)
t
55
60
65
65
65
RC
1
Marking
Features
None
-40B
-26A
-335
-262
-265
G
Notes
Y
I
1

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MT4VDDT3264AY-335F1 Summary of contents

Page 1

... RCD and RP for -335 modules show 18ns to align with industry specifications; Micron Technology, Inc., reserves the right to change products or specifications without notice. 1 Features 184-Pin UDIMM (MO-206) Marking 1 ≤ +70°C) None A ≤ +85°C) ...

Page 2

... Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT4VDDT3264AY-335F1. PDF: 09005aef8085081a/Source: 09005aef806e129d DD4C16_32x64A.fm - Rev. E 11/08 EN ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 184-Pin DDR UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol 1 Vref 24 DQ17 47 2 DQ0 25 DQS2 48 3 Vss 26 Vss 49 4 DQ1 ...

Page 4

... SSTL_2 reference voltage (Vdd/2). Supply Ground. – No connect: These pins are not connected on the module. – No function: Connected within the module but provides no functionality. 4 Pin Assignments and Descriptions 2 C bus Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

Page 5

Functional Block Diagram Figure 2: Functional Block Diagram S0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 ...

Page 6

... Serial Presence-Detect Operation DDR SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module type and various DDR SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer. System READ/WRITE operations ...

Page 7

... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the device data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 8

... Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. ...

Page 9

Idd Specifications Table 9: Idd Specifications and Conditions – 128MB (Die Revision K) Values are for the MT46V16M16 DDR SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16) component data sheet Parameter/Condition Operating one ...

Page 10

Table 10: Idd Specifications and Conditions – 128MB (All Other Die Revisions) Values are for the MT46V16M16 DDR SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16) component data sheet Parameter/Condition Operating one device ...

Page 11

Table 11: Idd Specifications and Conditions – 256MB Values are for the MT46V16M16 DDR SDRAM only and are computed from values specified in the 512Mb (32 Meg x 16) component data sheet Parameter/Condition Operating one device bank active-precharge current: t ...

Page 12

Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage: Iout = 3mA Input leakage current: Vin = GND to ...

Page 13

... SR) 184-Pin DDR SDRAM UDIMM Front view 133.50 (5.256) 133.20 (5.244 0.90 (0.035) R 6.35 (0.25) TYP 1.02 (0.04) TYP TYP 120.65 (4.75) TYP Back view No components this side of module 64.77 (2.55) TYP 13 Module Dimensions U5 31.9 (1.256) 31.6 (1.244) U6 17.78 (0.70) TYP Pin 92 Pin 93 3 ...

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