MT4VDDT3264AY-335F1 Micron Technology Inc, MT4VDDT3264AY-335F1 Datasheet
MT4VDDT3264AY-335F1
Specifications of MT4VDDT3264AY-335F1
Related parts for MT4VDDT3264AY-335F1
MT4VDDT3264AY-335F1 Summary of contents
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... RCD and RP for -335 modules show 18ns to align with industry specifications; Micron Technology, Inc., reserves the right to change products or specifications without notice. 1 Features 184-Pin UDIMM (MO-206) Marking 1 ≤ +70°C) None A ≤ +85°C) ...
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... Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT4VDDT3264AY-335F1. PDF: 09005aef8085081a/Source: 09005aef806e129d DD4C16_32x64A.fm - Rev. E 11/08 EN ...
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Pin Assignments and Descriptions Table 5: Pin Assignments 184-Pin DDR UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol 1 Vref 24 DQ17 47 2 DQ0 25 DQS2 48 3 Vss 26 Vss 49 4 DQ1 ...
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... SSTL_2 reference voltage (Vdd/2). Supply Ground. – No connect: These pins are not connected on the module. – No function: Connected within the module but provides no functionality. 4 Pin Assignments and Descriptions 2 C bus Micron Technology, Inc., reserves the right to change products or specifications without notice. ...
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Functional Block Diagram Figure 2: Functional Block Diagram S0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 ...
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... Serial Presence-Detect Operation DDR SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module type and various DDR SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer. System READ/WRITE operations ...
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... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the device data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...
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... Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. ...
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Idd Specifications Table 9: Idd Specifications and Conditions – 128MB (Die Revision K) Values are for the MT46V16M16 DDR SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16) component data sheet Parameter/Condition Operating one ...
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Table 10: Idd Specifications and Conditions – 128MB (All Other Die Revisions) Values are for the MT46V16M16 DDR SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16) component data sheet Parameter/Condition Operating one device ...
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Table 11: Idd Specifications and Conditions – 256MB Values are for the MT46V16M16 DDR SDRAM only and are computed from values specified in the 512Mb (32 Meg x 16) component data sheet Parameter/Condition Operating one device bank active-precharge current: t ...
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Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage: Iout = 3mA Input leakage current: Vin = GND to ...
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... SR) 184-Pin DDR SDRAM UDIMM Front view 133.50 (5.256) 133.20 (5.244 0.90 (0.035) R 6.35 (0.25) TYP 1.02 (0.04) TYP TYP 120.65 (4.75) TYP Back view No components this side of module 64.77 (2.55) TYP 13 Module Dimensions U5 31.9 (1.256) 31.6 (1.244) U6 17.78 (0.70) TYP Pin 92 Pin 93 3 ...