MMBTA06LT1XT Infineon Technologies, MMBTA06LT1XT Datasheet - Page 4

• Manufacturer Part Number: MMBTA06LT1XT
• Manufacturer: Infineon Technologies

Specifications of MMBTA06LT1XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage(max): 80V
• Emitter-base Voltage (max): 4V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 100
• Power Dissipation: 330mW
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Compliant

Collector cutoff current I
V
Collector-base capacitance C
Emitter-base capacitance C
CBO
CBO
10
pF
nA
10
10
10
10
10
80
60
50
40
30
20
10
5
5
5
5
-1
0
= 80 V
4
3
2
1
0
0
0
4
50
8
CEB
12
CBO
max
100
eb
=
cb
16
= (V
T
= (V
typ
A
(T
V
EHP00820
A
V
EB
C
)
CB (V EB )
CB
CCB
)
150
22
)
4
f
Transition frequency f
V
Total power dissipation P
T
CE
MHz
mW
10
10
10
550
450
400
350
300
250
200
150
100
5
5
= parameter in V, f = 2 GHz
50
10
3
1
2
0
0
0
15
BCW66K
BCW66
30
5
45
10
SMBTA06/MMBTA06
1
60
T
75
=
5
90 105 120
tot
10
(I
= (T
C
2
)
2007-04-19
S
mA
C
EHP00817
)
T
°C
S
150
10
3