MMBTA06LT1XT Infineon Technologies, MMBTA06LT1XT Datasheet
MMBTA06LT1XT
Specifications of MMBTA06LT1XT
Related parts for MMBTA06LT1XT
MMBTA06LT1XT Summary of contents
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NPN Silicon AF Transistor Low collector-emitter saturation voltage Complementary type: SMBTA 56 / MMBTA56 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type SMBTA06/MMBTA06 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage I = 100 µ Emitter-base breakdown voltage µ ...
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DC current gain 100 - Base-emitter saturation voltage ...
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Collector cutoff current I CBO CBO CBO Collector-base capacitance C Emitter-base capacitance ...
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Permissible Pulse Load totmax totDC tot max tot ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...