MMBTA06LT1XT Infineon Technologies, MMBTA06LT1XT Datasheet - Page 3

• Manufacturer Part Number: MMBTA06LT1XT
• Manufacturer: Infineon Technologies

Specifications of MMBTA06LT1XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage(max): 80V
• Emitter-base Voltage (max): 4V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 100
• Power Dissipation: 330mW
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Compliant

DC current gain h
V
Base-emitter saturation voltage
I
h
C
C
CE
FE
mA
=
10
10
10
10
10
5
5
5
10
10
10
10
= 1 V
3
2
1
0
-1
(V
3
2
1
0
0
10
BEsat
100 C
-1
-50 C
25 C
), h
10
0
FE
0.5
FE
= 10
=
10
1
(I
C
)
1.0
10
V
2
100 ˚C
C
-50 ˚C
BEsat
25 ˚C
EHP00821
mA
EHP00818
V
10
1.5
3
3
Collector-emitter saturation voltage
I
Collector current I
V
C
C
C
CE
= (V
mA
10
10
10
10
10
mA
5
5
10
10
10
10
= 1V
5
5
5
3
2
1
0
-1
0.0
3
2
1
0
0
CEsat
0.1 0.2
), h
FE
SMBTA06/MMBTA06
0.5
100
0.3
= 10
C
25 C
-50 C
= (V
C
0.4
BE
0.5
)
1.0
2007-04-19
0.6
V
100 C
-50 C
BE
25 C
V
EHP00815
CEsat
EHP00819
V
V
1.5
0.8