MT36HTF25672FY-667D1E3 Micron Technology Inc, MT36HTF25672FY-667D1E3 Datasheet
MT36HTF25672FY-667D1E3
Specifications of MT36HTF25672FY-667D1E3
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MT36HTF25672FY-667D1E3 Summary of contents
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... MT36HTF25672F – 2GB MT36HTF51272F – 4GB For the component data sheets, refer to Micron’s Web site: Features • 240-pin, fully buffered dual in-line memory module (FBDIMM) • Fast data transfer rates: PC2-4200, PC2-5300, or PC2-6400 • 2GB (256 Meg x 72), 4GB (512 Meg x 72) • ...
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... Module rank address Table 3: Part Numbers and Timing Parameters – 2GB Base device: MT47H128M4, Module 2 Part Number Density MT36HTF25672FY-80E__ 2GB MT36HTF25672FY-667__ 2GB MT36HTF25672FY-53E__ 2GB Table 4: Part Numbers and Timing Parameters – 4GB Base device: MT47H256M4, Module 2 Part Number Density 4GB MT36HTF51272FY-80E__ 4GB ...
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... Serial Presence-Detect (SPD) for Fully Buffered DIMM – JEDEC Standard No. 21-C page 4.1.2.7-1 The MT36HTF25672F and MT36HTF51272F DDR2 SDRAM modules are a high-band- width, large-capacity channel solution that have a narrow host interface. FBDIMMs use DDR2 SDRAM devices isolated from the channel behind an AMB buffer on the FBDIMM ...
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Pin Assignments and Descriptions Table 5: Pin Assignments 240-Pin FBDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol PN3 PN3 ...
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... The M_TEST pin provides an external connection for testing the margin of V produced by a voltage divider on the module not intended to be used in normal system operation and must not be connected (DNU system. This test pin may have other features on future card designs and will be included in this specification at that time. ...
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... Block Diagrams Commodity DDR2 DDR2 SDRAM component devices DDR2 component DDR2 component DDR2 component Up to eight modules AMB • • • DDR2 component DDR2 component DDR2 component DDR2 component SMBus access to buffer registers Micron Technology, Inc., reserves the right to change products or specifications without notice. ...
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Figure 3: Functional Block Diagram V SS RS0# RS1# DQS0 DQS0# DM CS# DQS DQS# DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQS1 DQS1# DM CS# DQS DQS# DQ8 DQ DQ9 DQ DQ10 DQ DQ11 DQ DQS2 DQS2# DM ...
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... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only and functional operation of the module at these or any other conditions outside those indicated in the device data sheet are not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...
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I Specifications and Conditions DD Table 10: I Conditions DD Symbol Condition I Idle current, single, or last DIMM: Low state; Idle (0% bandwidth); Primary channel enabled; DD_Idle_0 Secondary channel disabled; CKE HIGH; Command and address lines stable; DDR2 SDRAM ...
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Table 11: I Specifications – 2GB DDR2-533 DD Symbol I I DD_Idle_0 DD_Idle_1 I 2,200 3,000 CC I 2,140 2,140 DD Total power 7.5 Table 12: I Specifications – 2GB DDR2-667 DD Symbol I I DD_Idle_0 DD_Idle_1 I 2,600 3,400 ...
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Serial Presence-Detect Table 17: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition EEPROM and AMB supply voltage Input high voltage: Logic 1; all inputs Input low voltage: Logic 0; all inputs Output low voltage ...
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... U25 U25 U25 U25 U25 U31 U31 U31 U31 U31 U33 U33 U33 U33 U33 U38 12 Module Dimensions 2 (0.079) U14 U16 TYP 30.5 (1.201) 30.2 (1.189) U15 U17 17.3 (0.681) TYP 9.5 (0.374) TYP 3.9 (0.153) TYP (x2) Pin 120 45° x 0.18 (0.0071) 1 ...