MT36HVZS51272PY-667E1 Micron Technology Inc, MT36HVZS51272PY-667E1 Datasheet - Page 11

• Manufacturer Part Number: MT36HVZS51272PY-667E1
• Manufacturer: Micron Technology Inc

Specifications of MT36HVZS51272PY-667E1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 512Mx72
• Total Density: 4GByte
• Chip Density: 1Gb
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 2.376A
• Number Of Elements: 36
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Compliant

Table 10: DDR2 I
Values shown for MT47H256M4 DDR2 SDRAM only and are computed from values specified in the 1Gb TwinDie (256 Meg
x 4) component data sheet
PDF: 09005aef83e49b25
hv-z-s36c256_512x72py.pdf - Rev. D 03/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving reads,
I
=
valid commands; Address bus inputs are stable during deselects; Data bus inputs
are switching
OUT
t
RC (I
= 0mA; BL = 4, CL = CL (I
DD
),
t
RRD =
t
RRD (I
DD
Notes:
Specifications and Conditions – 2GB (Continued)
DD
),
DD
t
RCD =
1. Value calculated as one module rank in this operating condition. All other module ranks
2. Value calculated reflects all module ranks in this operating condition.
), AL =
in I
t
2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM VLP RDIMM
DD2P
RCD (I
t
RCD (I
(CKE LOW) mode.
DD
DD
); CKE is HIGH, S# is HIGH between
) - 1 ×
t
CK (I
DD
11
);
t
CK =
t
CK (I
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DD
),
t
RC
Combined
Symbol
I
CDD7
1
© 2006 Micron Technology, Inc. All rights reserved.
I
DD
4536
-667
Specifications
4266
-53E
Units
mA