MT4HTF6464HZ-667H1 Micron Technology Inc, MT4HTF6464HZ-667H1 Datasheet - Page 11

• Manufacturer Part Number: MT4HTF6464HZ-667H1
• Description: MOD DDR2 SDRAM 512MB 200SODIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT4HTF6464HZ-667H1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 1Gb
• Access Time (max): 900ns
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8/2.5/3.3V
• Operating Current: 880mA
• Number Of Elements: 4
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 667MT/s
• Features: -
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Compliant

Table 8: DDR2 I
Values shown for MT47H32M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) com-
ponent data sheet
PDF: 09005aef83c05a5d
htf4c64x64hz.pdf - Rev. B 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
(I
HIGH between valid commands; Address bus inputs are stable during deselects;
Data bus inputs are switching
DD
),
t
RC =
OUT
= 0mA; BL = 4, CL = CL (I
t
RC (I
DD
DD
),
t
RRD =
Specifications and Conditions – 1GB (Continued)
t
RRD (I
DD
DD
),
), AL =
t
RCD =
t
RCD (I
t
RCD (I
DD
DD
) - 1 ×
); CKE is HIGH, S# is
11
t
CK (I
512MB (x64, SR) 200-Pin DDR2 SODIMM
DD
);
t
CK =
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
CK
Symbol
I
DD7
-1GA
2080
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
-80E/
-800
1760
Specifications
1400
-667
Units
mA