5962-8981703XA QP SEMICONDUCTOR, 5962-8981703XA Datasheet - Page 11

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5962-8981703XA

Manufacturer Part Number
5962-8981703XA
Description
Manufacturer
QP SEMICONDUCTOR
Datasheet

Specifications of 5962-8981703XA

Organization
32Kx8
Interface Type
Parallel
In System Programmable
In System/External
Access Time (max)
35ns
Package Type
CDIP
Reprogramming Technique
UV
Operating Supply Voltage (typ)
5V
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Supply Current
130mA
Pin Count
28
Mounting
Through Hole
Operating Temp Range
-55C to 125C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Not Compliant

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DSCC FORM 2234
APR 97
Margin test method.
STD-883 including groups A, B, C, and D inspections. The following additional criteria shall apply.
has a wavelength of 2537 angstroms ( Å ). The integrated dose time (i.e., UV intensity x exposure time) for erasure should be
a minimum of 25 Ws/cm
12,000 µW/cm
integrated dose the device can be exposed to without damage is 7258 Ws/cm
devices to high intensity UV light for long periods may cause permanent damage.
4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with method 5005 of MIL-
4.3.1 Group A inspection.
4.3.2 Groups C and D inspections.
4.4 Erasing procedure. The recommended erasure procedure for the device is exposure to shortwave ultraviolet light which
(10) Erase (see 3.10.1). Devices may be submitted for groups A, B, C, and D testing prior to erasure provided the devices
(11) Verify erasure (see 3.10.3).
(1) Program a minimum of 50 percent of the total number of bits (see 3.10.2).
(2) Bake, unbiased, for 72 hours at +140°C or for 48 hours at +150°C or for 8 hours a +200°C or for 2 hours at +300°C for
(3) Test at +25°C (minimum) (see 3.10.3), including a margin test using verify mode at V
(4) Erase (see 3.10.1).
(5) Program at +25°C with a 50 percent pattern (checkerboard or equivalent).
(6) Perform dynamic burn-in (see 4.2a).
(7) Perform electrical tests at T
(8) Perform electrical tests at T
(9) Perform electrical tests at T
a. Tests shall be as specified in table II herein.
b. Subgroups 5 and 6 in table I, method 5005 of MIL-STD-883 shall be omitted.
c. Subgroup 4 (C
d. All devices selected for testing shall be programmed with a checkerboard pattern or equivalent.
a. End-point electrical parameters shall be as specified in table II herein.
b. Steady-state life test conditions, method 1005 of MIL-STD-883.
e.
changes which may affect capacitance. Sample size is fifteen devices with no failures and all input and output
terminals tested.
unassembled devices only.
(i.e., t
(i.e., t
(i.e., t
have been 100 percent seal tested in accordance with method 5004 of MIL-STD-883.
DEFENSE SUPPLY CENTER COLUMBUS
(i.e., t
Subgroups 7 and 8 shall include verification of the truth table.
(1)
(2)
(3)
MICROCIRCUIT DRAWING
COLUMBUS, OHIO 43218-3990
AA
AA
AA
AA
2
Test condition D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method
1005 of MIL-STD-883.
T
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
power rating. The device should be placed within one inch of the lamp tubes during erasure. The maximum
= 1 µs).
= 1 µs).
= 1 µs).
= 1 µs).
A
= +125°C, minimum.
STANDARD
IN
2
and C
. The erasure time with this dosage is approximately 35 minutes using a ultraviolet lamp with a
OUT
measurement) shall be measured only for the initial test and after process or design
C
C
C
= +25°C, including a margin test using read mode at V
= -55°C, including a margin test using read mode at V
= +125°C, including a margin test using read mode at V
SIZE
A
2
(1 week at 12,000 µW/cm
REVISION LEVEL
M
M
C
M
M
= +5.7 V and loose timing
= +5.7 V and loose timing
= +4.5 V and loose timing
= +5.7 V and loose timing
2
). Exposure of
SHEET
5962-89817
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