K4D263238KVC50 Samsung Semiconductor, K4D263238KVC50 Datasheet - Page 13

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K4D263238KVC50

Manufacturer Part Number
K4D263238KVC50
Description
Manufacturer
Samsung Semiconductor
Type
FPMr
Datasheet

Specifications of K4D263238KVC50

Organization
4Mx32
Density
128Mb
Address Bus
14b
Access Time (max)
700ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.625V
Operating Supply Voltage (min)
2.375V
Supply Current
60mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
AC CHARACTERISTICS
Simplified Timing @ BL=2, CL=3
K4D263238K
CK cycle time
CK high level width
CK low level width
DQS out access time from CK
Output access time from CK
Data strobe edge to Dout edge
Read preamble
Read postamble
CK to valid DQS-in
DQS-In setup time
DQS-in hold time
DQS write postamble
DQS-In high level width
DQS-In low level width
Address and Control input setup
Address and Control input hold
DQ and DM setup time to DQS
DQ and DM hold time to DQS
Clock half period
Data output hold time from DQS
COMMAND
CK, CK
DQS
DM
DQ
CS
READA
Parameter
0
CL=3
1
1
tCK
tCH
tCL
tDQSCK
tAC
tDQSQ
tRPRE
tRPST
tDQSS
tWPRES
tWPREH
tWPST
tDQSH
tDQSL
tIS
tIH
tDS
tDH
tHP
tQH
Symbol
2
tRPRE
tAC
tCH
tCK
tCHmin
tHP-0.4
tCLmin
0.45
0.85
3
0.45
0.35
Min
-0.6
-0.6
4.0
0.9
0.4
0.4
0.4
0.4
0.9
0.9
0.4
0.4
tDQSCK
or
0
tCL
-
Da1
tDQSQ
- 13/19 -
-40
tRPST
Da2
4
Max
0.55
0.55
1.15
0.6
0.6
0.4
1.1
0.6
0.6
0.6
0.6
10
-
-
-
-
-
-
-
-
tIS
tIH
WRITEB
5
t
WPRES
tHP-0.45
tCHmin
tCLmin
0.45
0.45
0.25
0.45
0.45
tDQSS
Min
-0.7
-0.7
5.0
0.9
0.4
0.8
0.4
0.4
0.4
1.0
1.0
or
0
-
t
WPREH
128M GDDR SDRAM
tDS tDH
6
-50
Db0
Rev. 1.2 October 2007
tDQSH
+0.45
+0.7
Db1
Max
0.55
0.55
+0.7
1.1
0.6
1.2
0.6
0.6
0.6
10
-
-
-
-
-
-
-
-
tWPST
7
Unit
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8
Note
Hi-Z
Hi-Z

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