RD38F2020W0YTQ0 Micron Technology Inc, RD38F2020W0YTQ0 Datasheet - Page 18

• Manufacturer Part Number: RD38F2020W0YTQ0
• Manufacturer: Micron Technology Inc

Specifications of RD38F2020W0YTQ0

• Operating Supply Voltage (max): 1.95V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

Intel® Wireless Flash Memory (W18/W30 SCSP)
6.0
6.1
Table 1.
June 2005
18
Parameter
S-V
V
I
V
V
I
I
V
I
CC2
I
V
I
CC
DR
OH
SB
OL
OH
DR
OL
IH
IL
CC
Voltage Range
V
Operating Current at
min cycle time
Operating Current at
max cycle time (1 µs)
Standby Current
Current in Data
Retention mode
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Output HIGH Current
Output LOW Current
CC
Electrical Specifications
DC Characteristics
SRAM and PSRAM DC characteristics are shown in
Intel
Flash Memory (W30) Datasheet (order number 290702) for flash DC characteristics.
SRAM DC Characteristics (Sheet 1 of 2)
NOTICE: DC Characteristics of all die in a SCSP device need to be considered accordingly,
depending on the SCSP device operation.
for Data Retention
Description
®
Wireless Flash Memory (W18) Datasheet (order number 290701) and the Intel
Intel® Wireless Flash Memory (W18/W30 SCSP)
Order Number: 251407, Revision: 009
Address/Data toggling at
S-CS1# ≥ S-V
or S-CS2 ≤ V
minimum cycle time
S-V
S-V
1.8 V SRAM:
3.0 V SRAM:
I
I
IO
IO
Test Conditions
CC
CC
= 0 mA
= 0 mA
I
I
OH
OL
= 1.0 V
= 1.5 V
V
= 100 µA,
= -100 µA
SS
CCMIN
CC
+0.2V
-0.2V
16M
16M
16M
16M
4M
8M
4M
8M
4M
8M
4M
8M
Table
S-V
S-V
0.15
Min
-0.1
-0.2
1.7
1.0
0.4
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.8 V SRAM
CC
CC
1,
-
-
Table 2
S-V
Max
1.95
0.2
0.2
0.4
25
35
40
10
12
20
30
10
18
–
4
6
6
–
–
–
CC
+
and
S-V
S-V
Table
Min
-0.1
-0.2
2.2
1.5
0.1
0.4
–
–
–
–
–
–
–
–
–
–
–
–
–
–
3.0 V SRAM
CC
CC
-
-
3. Refer to the
S-V
®
Max
3.3
0.1
0.2
0.6
45
50
55
10
10
15
15
25
45
12
15
–
5
–
–
–
Datasheet
Wireless
CC
+
Unit
mA
mA
mA
mA
µA
µA
V
V
V
V
V
V