PF38F1030W0ZBQ0 Micron Technology Inc, PF38F1030W0ZBQ0 Datasheet - Page 23
PF38F1030W0ZBQ0
Manufacturer Part Number
PF38F1030W0ZBQ0
Description
Manufacturer
Micron Technology Inc
Datasheet
1.PF38F1030W0ZBQ0.pdf
(52 pages)
Specifications of PF38F1030W0ZBQ0
Operating Supply Voltage (max)
1.95V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Compliant
Table 12.
Figure 6.
7.3
Table 13.
Notes:
1.
2.
3.
4.
5.
R-UB#, R-LB#
ADDRESSES
Datasheet
R1
R2
R3
R4
R5
R6
R7
R8
R9
W8
W9
#
S-CS1#
R-WE#
S-CS2
R-OE#
DATA
See
A write occurs during the overlap (t
WE# goes low with asserting R-UB# and R-LB# for single byte operation or simultaneously asserting R-UB#R-LB# and
R-LB# for double byte operation. A write ends at the earliest high transition of S-CS1# and R-WE#.
t
t
t
goes high.
WP
AS
WR
Symbol
is measured from the address valid to the beginning of a write.
is measured from S-CS1# low to the end of a write.
is measured from the end of write to the address change. t
Figure 6, “AC Waveform SRAM Write Operations”
t
t
t
t
t
t
t
OLZ
t
OHZ
t
RC
CO
OE
t
AA
BA
HZ
t
LZ
WR
BW
AC Waveform SRAM Write Operations
PSRAM AC Characteristics
PSRAM AC Characteristics — Read Operations
SRAM AC Characteristics — Write Operations
Standby
Read Cycle Time
Address to Output Delay
P-CS# to Output Delay
R-OE# to Output Delay
R-UB#, R-LB# to Output Delay
P-CS# to Output in Low-Z
R-OE# to Output in Low-Z
P-CS# to Output in High-Z
R-OE# to Output in High-Z
Write Recovery
R-UB#, R-LB# Setup to R-WE# (S-CS1#) High
Intel® Wireless Flash Memory (W18/W30 SCSP)
W2
Parameter
Order Number: 251407, Revision: 009
WP
) of low S-CS1# and low R-WE#. A write begins when S-CS1# goes low and R-
6
.
Address Stabl e
W5
Intel® Wireless Flash Memory (W18/W30 SCSP)
W6
W1
W1
Min
WR
88
10
W9
W9
–
–
–
–
5
–
–
W3
W3
applied in case a write ends as S-CS1# or R-WE#
1.8 V
4,000
Max
W4
88
25
25
88
88
65
–
–
Data In
60
Min
0
85
10
–
–
–
–
0
0
0
3.0 V
4,000
Max
85
85
40
85
25
25
–
–
–
–
W8
W7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
June 2005
1,2,3,4
Notes
1,3,4
1,2,4
1,4
1
1
1
1
1
1,5
1
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