SST39WF1601-90-4C-B3KE Microchip Technology, SST39WF1601-90-4C-B3KE Datasheet - Page 2

• Manufacturer Part Number: SST39WF1601-90-4C-B3KE
• Description: 1.65V To 1.95V 16Mbit Multi-Purpose Flash 48 TFBGA 6x8x1.2 Mm TRAY
• Manufacturer: Microchip Technology

Specifications of SST39WF1601-90-4C-B3KE

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (1M x 16)
• Speed: 90ns
• Interface: Parallel
• Voltage - Supply: 1.65 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Data Sheet
To meet high density, surface mount requirements, the
SST39WF1601/1602 are offered in both 48-ball TFBGA
and 48-ball WFBGA packages. See Figures 2 and 3 for
pin assignments.
Device Operation
Commands are used to initiate the memory operation func-
tions of the device. Commands are written to the device
using standard microprocessor write sequences. A com-
mand is written by asserting WE# low while keeping CE#
low. The address bus is latched on the falling edge of WE#
or CE#, whichever occurs last. The data bus is latched on
the rising edge of WE# or CE#, whichever occurs first.
The SST39WF1601/1602 also have the Auto Low Power
mode which puts the device in a near standby mode after
data has been accessed with a valid Read operation. This
reduces the I
typically 5 µA. The Auto Low Power mode reduces the typi-
cal I
Read cycle time. The device exits the Auto Low Power
mode with any address transition or control signal transition
used to initiate another Read cycle, with no access time
penalty. Note that the device does not enter Auto-Low
Power mode after power-up with CE# held steadily low,
until the first address transition or CE# is driven high.
Read
The Read operation of the SST39WF1601/1602 is con-
trolled by CE# and OE#, both have to be low for the sys-
tem to obtain data from the outputs. CE# is used for
device selection. When CE# is high, the chip is dese-
lected and only standby power is consumed. OE# is the
output control and is used to gate data from the output
pins. The data bus is in high impedance state when
either CE# or OE# is high. Refer to the Read cycle timing
diagram for further details (Figure 4).
©2008 Silicon Storage Technology, Inc.
DD
active read current to the range of 2 mA/MHz of
DD
active read current from typically 9 mA to
2
Word-Program Operation
The SST39WF1601/1602 are programmed on a word-by-
word basis. Before programming, the sector where the
word exists must be fully erased. The Program operation is
accomplished in three steps. The first step is the three-byte
load sequence for Software Data Protection. The second
step is to load word address and word data. During the
Word-Program operation, the addresses are latched on the
falling edge of either CE# or WE#, whichever occurs last.
The data is latched on the rising edge of either CE# or
WE#, whichever occurs first. The third step is the internal
Program operation which is initiated after the rising edge of
the fourth WE# or CE#, whichever occurs first. The Pro-
gram operation, once initiated, will be completed within 40
µs. See Figures 5 and 6 for WE# and CE# controlled Pro-
gram operation timing diagrams and Figure 20 for flow-
charts. During the Program operation, the only valid reads
are Data# Polling and Toggle Bit. During the internal Pro-
gram operation, the host is free to perform additional tasks.
Any commands issued during the internal Program opera-
tion are ignored. During the command sequence, WP#
should be statically held high or low.
Sector/Block-Erase Operation
The Sector- (or Block-) Erase operation allows the system
to erase the device on a sector-by-sector (or block-by-
block) basis. The SST39WF1601/1602 offer both Sector-
Erase and Block-Erase modes. The sector architecture is
based on uniform sector size of 2 KWord. The Block-Erase
mode is based on uniform block size of 32 KWord. The
Sector-Erase operation is initiated by executing a six-byte
command sequence with Sector-Erase command (30H)
and sector address (SA) in the last bus cycle. The Block-
Erase operation is initiated by executing a six-byte com-
mand sequence with Block-Erase command (50H) and
block address (BA) in the last bus cycle. The sector or block
address is latched on the falling edge of the sixth WE#
pulse, while the command (30H or 50H) is latched on the
rising edge of the sixth WE# pulse. The internal Erase
operation begins after the sixth WE# pulse. The End-of-
Erase operation can be determined using either Data#
Polling or Toggle Bit methods. See Figures 10 and 11 for
timing waveforms and Figure 24 for the flowchart. Any
commands issued during the Sector- or Block-Erase oper-
ation are ignored. When WP# is low, any attempt to Sector-
(Block-) Erase the protected block will be ignored. During
the command sequence, WP# should be statically held
high or low.
16 Mbit Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
S71297-04-000
12/08