SST39WF1601-90-4C-B3KE Microchip Technology, SST39WF1601-90-4C-B3KE Datasheet - Page 12

• Manufacturer Part Number: SST39WF1601-90-4C-B3KE
• Description: 1.65V To 1.95V 16Mbit Multi-Purpose Flash 48 TFBGA 6x8x1.2 Mm TRAY
• Manufacturer: Microchip Technology

Specifications of SST39WF1601-90-4C-B3KE

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (1M x 16)
• Speed: 90ns
• Interface: Parallel
• Voltage - Supply: 1.65 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Data Sheet
TABLE 10: DC Operating Characteristics V
TABLE 11: Recommended System Power-up Timings
TABLE 12: Capacitance
TABLE 13: Reliability Characteristics
©2008 Silicon Storage Technology, Inc.
Symbol
I
I
I
I
I
I
V
V
V
V
Symbol
T
T
Parameter
C
C
Symbol
N
T
I
DD
SB
ALP
LI
LIW
LO
LTH
PU-READ
PU-WRITE
DR
IL
IH
OL
OH
I/O
IN
END
1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C
2. For all SST39WF160x commercial and industrial devices, I
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. N
1
1
1
1
(room temperature), and V
higher minimum specification.
1,2
END
1
1
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
Parameter
Power Supply Current
Read
Program and Erase
Standby V
Auto Low Power
Input Leakage Current
Input Leakage Current
on WP# pin and RST#
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Description
I/O Pin Capacitance
Input Capacitance
Parameter
Endurance
Data Retention
Latch Up
DD
Current
DD
(T
A
= 1.8V. Not 100% tested.
2
= 25°C, f=1 Mhz, other pins open)
V
0.8V
DD
Min
-0.1
DD
DD
Minimum Specification
= 1.65-1.95V
SB
Limits
typical is under 5 µA.
0.2V
12
Max
100 + I
0.1
25
10
40
40
10
1
1
10,000
DD
100
DD
1
Units
16 Mbit Multi-Purpose Flash Plus
mA
mA
µA
µA
µA
µA
µA
V
V
V
V
SST39WF1601 / SST39WF1602
Test Conditions
Address input=V
V
CE#=V
CE#=WE#=V
CE#=V
CE#=V
All inputs=V
V
WP#=GND to V
V
V
V
I
I
OL
OH
DD
IN
OUT
DD
DD
Cycles
Test Condition
Units
Years
=100 µA, V
=GND to V
=-100 µA, V
mA
=V
=V
=V
Minimum
=GND to V
V
V
I/O
DD
DD
DD
IN
IL
IHC
ILC
100
100
, OE#=WE#=V
= 0V
= 0V
, V
Max
Min
Max
, V
SS
DD
DD
IL
DD
DD
JEDEC Standard A103
JEDEC Standard A117
, OE#=V
or V
=V
DD
=V
JEDEC Standard 78
DD
DD
, V
ILT
=V
=V
DD
DD
, V
/V
DD,
or RST#=GND to V
DD
DD
Test Method
DD
IHT,
Max
Max
DD
=V
WE#=V
Min
S71297-04-000
IH
IH
=V
Min
DD
at f=5 MHz,
, all I/Os open
Maximum
DD
Max
12 pF
Units
6 pF
Max
µs
µs
IHC
T10.0 1297
T11.0 1297
T12.0 1297
T13.0 1297
12/08
DD