SST39WF1601-90-4C-B3KE Microchip Technology, SST39WF1601-90-4C-B3KE Datasheet - Page 17

• Manufacturer Part Number: SST39WF1601-90-4C-B3KE
• Description: 1.65V To 1.95V 16Mbit Multi-Purpose Flash 48 TFBGA 6x8x1.2 Mm TRAY
• Manufacturer: Microchip Technology

Specifications of SST39WF1601-90-4C-B3KE

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (1M x 16)
• Speed: 90ns
• Interface: Parallel
• Voltage - Supply: 1.65 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

16 Mbit Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
©2008 Silicon Storage Technology, Inc.
FIGURE 10: WE# Controlled Block-Erase Timing Diagram
FIGURE 11: WE# Controlled Sector-Erase Timing Diagram
ADDRESS A
ADDRESS A
DQ
DQ
Note: This device also supports CE# controlled Block-Erase operation.
Note: This device also supports CE# controlled Sector-Erase operation.
WE#
CE#
OE#
WE#
19-0
15-0
CE#
OE#
19-0
15-0
The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 15.)
BA
WP# must be held in proper logic state (V
X can be V
The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 15.)
SA
WP# must be held in proper logic state (V
X can be V
X
X
= Block Address
= Sector Address
5555
5555
IL
IL
XXAA
T
SW0
XXAA
T
or V
or V
SW0
WP
WP
IH,
IH,
2AAA
but no other value.
but no other value.
2AAA
XX55
SW1
XX55
SW1
SIX-BYTE CODE FOR SECTOR-ERASE
SIX-BYTE CODE FOR BLOCK-ERASE
5555
5555
XX80
SW2
XX80
SW2
IH
IH
) 1 µs prior to and 1µs after the command sequence.
) 1 µs prior to and 1µs after the command sequence.
5555
5555
XXAA
SW3
17
XXAA
SW3
2AAA
2AAA
XX55
SW4
XX55
SW4
SA
BA
X
XX30
SW5
X
XX50
SW5
T
T
SE
BE
S71297-04-000
Data Sheet
1297 F10.1
1297 F09.1
12/08