BCP51,115 NXP Semiconductors, BCP51,115 Datasheet - Page 6

• Manufacturer Part Number: BCP51,115
• Description: TRANSISTOR PNP 45V 1A SOT-223
• Manufacturer: NXP Semiconductors

Specifications of BCP51,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1W
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 45V
• Transistor Type: PNP
• Frequency - Transition: 145MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1000 mW
• Maximum Operating Frequency: 145 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933917270115::BCP51 T/R::BCP51 T/R

NXP Semiconductors
6. Thermal characteristics
BC636_BCP51_BCX51_8
Product data sheet
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT54;
Z
(K/W)
th(j-a)
10
10
10
10
1
3
2
1
10
FR4 PCB, standard footprint
typical values
duty cycle =
5
1
0.5
0.2
0.1
0.05
0.02
0.01
0
0.75
0.33
10
4
Table 7.
[1]
[2]
[3]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
10
Thermal characteristics
3
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
BC636
BCP51
BCX51
BC636
BCP51
BCX51
10
Rev. 08 — 22 February 2008
2
10
1
Conditions
in free air
BC636; BCP51; BCX51
1
45 V, 1 A PNP medium power transistors
[1]
[1]
[2]
[1]
[2]
[3]
10
Min
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
10
2
© NXP B.V. 2008. All rights reserved.
t
006aaa222
p
(s)
Max
150
190
125
230
135
95
40
17
20
10
3
2
2
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
.
.
6 of 15