BCP 49 H6327 Infineon Technologies, BCP 49 H6327 Datasheet
BCP 49 H6327
Specifications of BCP 49 H6327
Related parts for BCP 49 H6327
BCP 49 H6327 Summary of contents
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NPN Silicon Darlington Transistors For general AF applications High collector current High current gain Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking BCP49 BCP 49 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage I = 100 µ Emitter-base breakdown voltage µ ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter saturation voltage1 100 mA 0 Base-emitter saturation voltage 100 mA 0 Characteristics Transition frequency I = ...
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Total power dissipation P 1650 mW 1350 1200 1050 900 750 600 450 300 150 Transition frequency BCP 29/ MHz ...
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DC current gain BCP 29/ 125 ˚ ˚C 5 -55 ˚ Collector-base ...
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Package Outline Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0 ±0 2.3 0.7 ±0.1 4.6 0. ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...