BCP51,115 NXP Semiconductors, BCP51,115 Datasheet - Page 10

• Manufacturer Part Number: BCP51,115
• Description: TRANSISTOR PNP 45V 1A SOT-223
• Manufacturer: NXP Semiconductors

Specifications of BCP51,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1W
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 45V
• Transistor Type: PNP
• Frequency - Transition: 145MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1000 mW
• Maximum Operating Frequency: 145 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933917270115::BCP51 T/R::BCP51 T/R

NXP Semiconductors
BC636_BCP51_BCX51_8
Product data sheet
Fig 10. DC current gain as a function of collector
Fig 12. Base-emitter voltage as a function of collector
(mV)
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
h
BE
1200
1000
FE
300
200
100
800
600
400
200
0
V
current; typical values
10
V
current; typical values
10
amb
amb
amb
amb
amb
amb
CE
CE
1
1
= 2 V
= 2 V
= 150 C
= 25 C
= 55 C
= 55 C
= 25 C
= 150 C
1
1
10
10
(1)
(2)
(3)
(1)
(2)
(3)
10
10
2
2
10
10
006aaa226
006aaa227
3
3
I
I
C
C
(mA)
(mA)
Rev. 08 — 22 February 2008
10
10
4
4
Fig 11. Collector current as a function of
Fig 13. Collector-emitter saturation voltage as a
V
(mV)
(1) T
(2) T
(3) T
CEsat
(A)
I
C
10
10
1.6
1.2
0.8
0.4
BC636; BCP51; BCX51
10
0
3
2
10
T
collector-emitter voltage; typical values
I
function of collector current; typical values
C
0
amb
amb
amb
amb
/I
1
B
= 10
45 V, 1 A PNP medium power transistors
= 25 C
= 150 C
= 25 C
= 55 C
0.4
1
I
B
(2)
(mA) = 45
0.8
10
(1)
(3)
1.2
10
2
40.5
© NXP B.V. 2008. All rights reserved.
10
36
1.6
006aaa228
006aaa230
V
3
I
C
CE
(mA)
31.5
22.5
18
13.5
27
9
4.5
(V)
2.0
10
4
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