PBLS6005D,115 NXP Semiconductors, PBLS6005D,115 Datasheet - Page 6

• Manufacturer Part Number: PBLS6005D,115
• Description: LOADSWITCH PNP 60V 1A SOT457
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBLS6005D,115

• Package / Case: SC-74-6
• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 700mA
• Voltage - Collector Emitter Breakdown (max): 50V, 60V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V / 150 @ 500mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A
• Current - Collector Cutoff (max): 1µA, 100nA
• Frequency - Transition: 185MHz
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 47 KOhms at NPN
• Typical Resistor Ratio: 1 at NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V at NPN, 60 V at PNP
• Peak Dc Collector Current: 100 mA at NPN, 1000 mA at PNP
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934059337115; PBLS6005D T/R; PBLS6005D T/R

NXP Semiconductors
7. Characteristics
PBLS6005D_2
Product data sheet
Fig 4.
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
Ceramic PCB, Al
TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time;
typical values
5
= 1
0.75
0.5
0.33
0.05
0.02
0.01
0.2
0.1
0
10
4
Table 7.
T
2
Symbol
TR1; PNP low V
I
I
I
h
V
R
V
CBO
CES
EBO
O
amb
FE
CEsat
BEsat
CEsat
3
, standard footprint
= 25 C unless otherwise specified
10
Parameter
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off current V
DC current gain
collector-emitter saturation
voltage
collector-emitter saturation
resistance
base-emitter saturation
voltage
Characteristics
3
CEsat
10
transistor
Rev. 02 — 7 September 2009
2
10
1
Conditions
V
V
T
V
V
V
I
V
I
I
I
I
I
I
I
I
I
I
C
C
C
B
C
B
C
B
C
B
C
j
CB
CB
CE
EB
CE
CE
CE
= 150 C
= 500 mA
= 1000 mA
= 100 mA;
= 1 mA
= 500 mA;
= 50 mA
= 1000 mA;
= 100 mA
= 1 A;
= 100 mA
= 1 A; I
= 60 V; I
= 60 V; I
= 60 V; V
= 5 V; I
= 5 V; I
= 5 V;
= 5 V;
1
B
C
= 50 mA
C
E
E
= 0 A
= 1 mA
BE
= 0 A
= 0 A;
= 0 V
10
[1]
[1]
[1]
[1]
[1]
[1]
60 V PNP BISS loadswitch
Min
-
-
-
-
200
150
100
-
-
-
-
-
PBLS6005D
10
2
Typ
-
-
-
-
350
230
160
255
110
135
255
0.95
© NXP B.V. 2009. All rights reserved.
t
p
006aaa464
(s)
Max
-
-
-
340
100
50
100
100
175
180
340
1.1
10
3
Unit
nA
nA
nA
mV
mV
mV
m
V
6 of 16
A