PBLS6005D,115 NXP Semiconductors, PBLS6005D,115 Datasheet - Page 14
PBLS6005D,115
Manufacturer Part Number
PBLS6005D,115
Description
LOADSWITCH PNP 60V 1A SOT457
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PBLS6005D115.pdf
(16 pages)
Specifications of PBLS6005D,115
Package / Case
SC-74-6
Transistor Type
1 NPN Pre-Biased, 1 PNP
Current - Collector (ic) (max)
100mA, 700mA
Voltage - Collector Emitter Breakdown (max)
50V, 60V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 5V / 150 @ 500mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA / 340mV @ 100mA, 1A
Current - Collector Cutoff (max)
1µA, 100nA
Frequency - Transition
185MHz
Power - Max
600mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN/PNP
Typical Input Resistor
47 KOhms at NPN
Typical Resistor Ratio
1 at NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V at NPN, 60 V at PNP
Peak Dc Collector Current
100 mA at NPN, 1000 mA at PNP
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934059337115
PBLS6005D T/R
PBLS6005D T/R
PBLS6005D T/R
PBLS6005D T/R
NXP Semiconductors
12. Revision history
Table 9.
PBLS6005D_2
Product data sheet
Document ID
PBLS6005D_2
Modifications:
PBLS6005D_1
Revision history
Release date
20090907
20050623
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 6 “TR1 (PNP): Collector-emitter saturation voltage as a function of collector current;
typical
Figure 21 “Wave soldering
values”: V
Rev. 02 — 7 September 2009
Data sheet status
Product data sheet
Product data sheet
CEsat
unit amended from mV to V
footprint”: updated
Change notice
-
-
60 V PNP BISS loadswitch
PBLS6005D
Supersedes
PBLS6005D_1
-
© NXP B.V. 2009. All rights reserved.
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