PBLS6005D,115 NXP Semiconductors, PBLS6005D,115 Datasheet - Page 14

LOADSWITCH PNP 60V 1A SOT457

PBLS6005D,115

Manufacturer Part Number
PBLS6005D,115
Description
LOADSWITCH PNP 60V 1A SOT457
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PBLS6005D,115

Package / Case
SC-74-6
Transistor Type
1 NPN Pre-Biased, 1 PNP
Current - Collector (ic) (max)
100mA, 700mA
Voltage - Collector Emitter Breakdown (max)
50V, 60V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 5V / 150 @ 500mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA / 340mV @ 100mA, 1A
Current - Collector Cutoff (max)
1µA, 100nA
Frequency - Transition
185MHz
Power - Max
600mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN/PNP
Typical Input Resistor
47 KOhms at NPN
Typical Resistor Ratio
1 at NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V at NPN, 60 V at PNP
Peak Dc Collector Current
100 mA at NPN, 1000 mA at PNP
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934059337115
PBLS6005D T/R
PBLS6005D T/R
NXP Semiconductors
12. Revision history
Table 9.
PBLS6005D_2
Product data sheet
Document ID
PBLS6005D_2
Modifications:
PBLS6005D_1
Revision history
Release date
20090907
20050623
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 6 “TR1 (PNP): Collector-emitter saturation voltage as a function of collector current;
typical
Figure 21 “Wave soldering
values”: V
Rev. 02 — 7 September 2009
Data sheet status
Product data sheet
Product data sheet
CEsat
unit amended from mV to V
footprint”: updated
Change notice
-
-
60 V PNP BISS loadswitch
PBLS6005D
Supersedes
PBLS6005D_1
-
© NXP B.V. 2009. All rights reserved.
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