PUMB9,115 NXP Semiconductors, PUMB9,115 Datasheet - Page 8

• Manufacturer Part Number: PUMB9,115
• Description: TRANS NPN/PNP 50V 100MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of PUMB9,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 10 KOhm
• Typical Resistor Ratio: 0.2
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057506115; PUMB9 T/R; PUMB9 T/R

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NXP Semiconductors
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This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
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R75/02/pp8
Date of release: 2003 Oct 03
Document order number: 9397 750 11796