PUMB9,115 NXP Semiconductors, PUMB9,115 Datasheet

TRANS NPN/PNP 50V 100MA SOT363

PUMB9,115

Manufacturer Part Number
PUMB9,115
Description
TRANS NPN/PNP 50V 100MA SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMB9,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
PNP
Typical Input Resistor
10 KOhm
Typical Resistor Ratio
0.2
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057506115
PUMB9 T/R
PUMB9 T/R
Product data sheet
Supersedes data of 2003 Feb 03
DATA SHEET
PEMB9; PUMB9
PNP/PNP resistor-equipped
transistors; R1 = 10 kΩ, R2 = 47 kΩ
DISCRETE SEMICONDUCTORS
2003 Oct 03

Related parts for PUMB9,115

PUMB9,115 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET PEMB9; PUMB9 PNP/PNP resistor-equipped transistors kΩ kΩ Product data sheet Supersedes data of 2003 Feb 03 2003 Oct 03 ...

Page 2

... NXP Semiconductors PNP/PNP resistor-equipped transistors kΩ kΩ FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral drivers • Replacement of general purpose transistors in digital applications • Control of IC inputs. ...

Page 3

... NXP Semiconductors PNP/PNP resistor-equipped transistors kΩ kΩ ORDERING INFORMATION TYPE NUMBER NAME − PEMB9 − PUMB9 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO V input voltage ...

Page 4

... NXP Semiconductors PNP/PNP resistor-equipped transistors kΩ kΩ THERMAL CHARACTERISTICS SYMBOL PARAMETER Per transistor R thermal resistance from junction to ambient th j-a SOT363 SOT666 Per device R thermal resistance from junction to ambient th j-a SOT363 SOT666 Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. ...

Page 5

... NXP Semiconductors PNP/PNP resistor-equipped transistors kΩ kΩ PACKAGE OUTLINES Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2003 Oct scale 1.3 1.7 0.3 1.0 ...

Page 6

... NXP Semiconductors PNP/PNP resistor-equipped transistors kΩ kΩ Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 2003 Oct scale 2.2 1.35 2.2 0.45 1.3 0.65 1 ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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