BC847BV,115 NXP Semiconductors, BC847BV,115 Datasheet - Page 5

• Manufacturer Part Number: BC847BV,115
• Description: TRANS NPN 45V 100MA DUAL SOT666
• Manufacturer: NXP Semiconductors

Specifications of BC847BV,115

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SS Mini-6 (SOT-666)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934056535115; BC847BV T/R; BC847BV T/R

NXP Semiconductors
Graphical information BC847BV
2001 Sep 10
handbook, halfpage
handbook, halfpage
NPN general purpose double transistor
V
(1) T
(2) T
(3) T
V CEsat
I
(1) T
(2) T
(3) T
Fig.5
C
(mV)
CE
/I
h FE
B
600
500
400
300
200
100
10
10
10
= 5 V.
= 20.
10
amb
amb
amb
amb
amb
amb
0
10
10
4
3
2
−1
Fig.3 DC current gain; typical values.
−1
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
2
2
I C (mA)
I C (mA)
MHB971
MHB973
10
10
3
3
5
handbook, halfpage
handbook, halfpage
V BEsat
(mV)
V
(1) T
(2) T
(3) T
Fig.4
I
(1) T
(2) T
(3) T
Fig.6
(mV)
C
V BE
CE
/I
1200
1000
1200
1000
B
800
600
400
200
800
600
400
200
= 5 V.
20.
amb
amb
amb
amb
amb
amb
0
0
10
10
−1
−2
= −55 °C.
= 25 °C.
= 150 °C.
= −55 °C.
= 25 °C.
= 150 °C.
Base-emitter voltage as a function of
collector current; typical values.
Base-emitter saturation voltage as a
function of collector current; typical values.
10
−1
(1)
(2)
(3)
1
(1)
(2)
(3)
1
10
10
10
Product data sheet
2
10
BC847BV
I C (mA)
2
I C (mA)
MHB972
MHB974
10
10
3
3