BC847BV,115 NXP Semiconductors, BC847BV,115 Datasheet - Page 3

• Manufacturer Part Number: BC847BV,115
• Description: TRANS NPN 45V 100MA DUAL SOT666
• Manufacturer: NXP Semiconductors

Specifications of BC847BV,115

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SS Mini-6 (SOT-666)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934056535115; BC847BV T/R; BC847BV T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Sep 10
Per transistor
V
V
V
I
I
I
P
T
T
T
Per device
P
R
SYMBOL
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
tot
NPN general purpose double transistor
th j-a
thermal resistance from junction to ambient
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
PARAMETER
PARAMETER
open emitter
open base
open collector
T
T
amb
amb
≤ 25 °C; note 1
≤ 25 °C; note 1
notes 1 and 2
3
CONDITIONS
CONDITIONS
−
−
−
−
−
−
−
−65
−
−65
−
MIN.
VALUE
416
50
45
5
100
200
200
200
+150
150
+150
300
MAX.
Product data sheet
BC847BV
UNIT
K/W
V
V
V
mA
mA
mA
mW
°C
°C
°C
mW
UNIT