BC847BV,115 NXP Semiconductors, BC847BV,115 Datasheet - Page 4

• Manufacturer Part Number: BC847BV,115
• Description: TRANS NPN 45V 100MA DUAL SOT666
• Manufacturer: NXP Semiconductors

Specifications of BC847BV,115

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SS Mini-6 (SOT-666)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934056535115; BC847BV T/R; BC847BV T/R

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Sep 10
handbook, full pagewidth
Per transistor
I
I
h
V
V
V
C
C
f
SYMBOL
amb
CBO
EBO
T
FE
BE
CEsat
BEsat
NPN general purpose double transistor
c
e
h FE
= 25 °C; unless otherwise specified.
300
200
100
0
10
−2
collector-base cut-off current
emitter-base cut-off current
DC current gain
base-emitter voltage
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
10
−1
Fig.2 DC current gain; typical values.
I
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
E
C
C
1
= 0; V
= 0; V
= 0; V
= 2 mA; V
= 2 mA; V
= 10 mA; I
= 100 mA; I
= 10 mA; I
= I
= i
= 10 mA; V
e
c
= 0; V
= 0; V
CB
CB
EB
4
CONDITIONS
= 30 V
= 30 V; T
= 5 V
EB
CE
CE
CB
B
B
CE
B
= 0.5 mA
= 0.5 mA
= 500 mV;f = 1 MHz −
= 5 V
= 5 V
= 10 V; f = 1 MHz
= 5 mA; note 1
= 5 V; f = 100 MHz 100
10
j
= 150 °C
V CE = 5 V
−
−
−
200
580
−
−
−
−
MIN.
10
2
−
−
−
−
655
−
−
755
−
11
−
TYP.
I C (mA)
Product data sheet
BC847BV
15
5
100
450
700
100
300
−
1.5
−
−
MAX.
MBH724
10
3
nA
μA
nA
mV
mV
mV
mV
pF
pF
MHz
UNIT