PMBT3904VS,115 NXP Semiconductors, PMBT3904VS,115 Datasheet - Page 7

• Manufacturer Part Number: PMBT3904VS,115
• Description: TRANS NPN/NPN 40V 200MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PMBT3904VS,115

• Package / Case: SS Mini-6 (SOT-666)
• Mounting Type: Surface Mount
• Power - Max: 360mW
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Transistor Type: 2 NPN (Dual)
• Frequency - Transition: 300MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Collector/base Gain Hfe Min: 180
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: NPN/NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 200 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 240 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934063472115

NXP Semiconductors
8. Test information
9. Package outline
PMBT3904VS_1
Product data sheet
Fig 8.
Fig 9.
V
R1 = 56 ; R2 = 2.5 k ; R
V
Test circuit for switching times
Package outline SOT666
I
BB
= 5 V; t = 600 s; t
= 1.9 V; V
oscilloscope
1.7
1.5
CC
Dimensions in mm
V
I
Rev. 01 — 8 July 2009
= 3 V
1.3
1.1
p
(probe)
450
= 10 s; t
B
pin 1 index
= 3.9 k ; R
R1
r
6
1
0.5
= t
R2
f
1.7
1.5
R
1
B
3 ns
V
C
BB
5
2
40 V, 200 mA NPN/NPN switching transistor
= 270
R
C
V
CC
3
4
DUT
0.27
0.17
V
o
mlb826
0.3
0.1
(probe)
450
PMBT3904VS
0.6
0.5
oscilloscope
0.18
0.08
04-11-08
© NXP B.V. 2009. All rights reserved.
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