PMBT3904 /T3 NXP Semiconductors, PMBT3904 /T3 Datasheet

no-image

PMBT3904 /T3

Manufacturer Part Number
PMBT3904 /T3
Description
Transistors Bipolar - BJT TRANS SW TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBT3904 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
300 MHz
Dc Collector/base Gain Hfe Min
60 at 0.1 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.2 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
PMBT3904,235
Product data sheet
Supersedes data of 1999 Apr 27
DATA SHEET
PMBT3904
NPN switching transistor
DISCRETE SEMICONDUCTORS
2004 Jan 12

Related parts for PMBT3904 /T3

PMBT3904 /T3 Summary of contents

Page 1

DATA SHEET PMBT3904 NPN switching transistor Product data sheet Supersedes data of 1999 Apr 27 DISCRETE SEMICONDUCTORS 2004 Jan 12 ...

Page 2

... NXP Semiconductors NPN switching transistor FEATURES • Collector current capability I C • Collector-emitter voltage V CEO APPLICATIONS • General switching and amplification. DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT3906. MARKING TYPE NUMBER PMBT3904 Note Made in Hong Kong. ...

Page 3

... NXP Semiconductors NPN switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...

Page 4

... NXP Semiconductors NPN switching transistor SYMBOL PARAMETER f transition frequency T F noise figure Switching times (between 10% and 90% levels); see Fig.3 t delay time d t rise time r t storage time s t fall time f Note ≤ 300 µs; δ ≤ 0.02. 1. Pulse test 500 handbook, halfpage ...

Page 5

... NXP Semiconductors NPN switching transistor 1200 handbook, halfpage V BE (mV) 1000 (1) 800 (2) 600 (3) 400 200 − −55 °C. (1) T amb = 25 °C. (2) T amb = 150 °C. (3) T amb Fig.4 Base-emitter voltage as a function of collector current handbook, halfpage V CEsat (mV) ...

Page 6

... NXP Semiconductors NPN switching transistor handbook, full pagewidth = 500 µ µ Ω 2.5 kΩ 3.9 kΩ −1 Ω. Oscilloscope: input impedance Z i 2004 Jan (probe) oscilloscope 450 Ω ...

Page 7

... NXP Semiconductors NPN switching transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC JEITA ...

Page 8

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 9

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

Related keywords