PMBT3904VS,115 NXP Semiconductors, PMBT3904VS,115 Datasheet - Page 2

• Manufacturer Part Number: PMBT3904VS,115
• Description: TRANS NPN/NPN 40V 200MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PMBT3904VS,115

• Package / Case: SS Mini-6 (SOT-666)
• Mounting Type: Surface Mount
• Power - Max: 360mW
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Transistor Type: 2 NPN (Dual)
• Frequency - Transition: 300MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Collector/base Gain Hfe Min: 180
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: NPN/NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 200 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 240 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934063472115

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PMBT3904VS_1
Product data sheet
Table 3.
Table 4.
Table 5.
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
6
Type number
PMBT3904VS
Type number
PMBT3904VS
Symbol
Per transistor
V
V
V
I
I
I
P
Per device
P
C
CM
BM
CBO
CEO
EBO
tot
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
total power dissipation
Pinning
Ordering information
Marking codes
Limiting values
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
Package
Name
-
Rev. 01 — 8 July 2009
Description
plastic surface-mounted package; 6 leads
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
T
40 V, 200 mA NPN/NPN switching transistor
p
p
amb
amb
Marking code
ZC
1 ms
1 ms
25 C
25 C
Simplified outline
6
1
[1][2]
[1][2]
5
2
PMBT3904VS
3
4
Min
-
-
-
-
-
-
-
-
Graphic symbol
© NXP B.V. 2009. All rights reserved.
Max
60
40
6
200
200
100
240
360
TR1
6
1
sym020
5
2
Version
SOT666
Unit
V
V
V
mA
mA
mA
mW
mW
4
3
TR2
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