BLT50,115 NXP Semiconductors, BLT50,115 Datasheet - Page 9

• Manufacturer Part Number: BLT50,115
• Description: TRANS NPN 7.5V SOT223
• Manufacturer: NXP Semiconductors

Specifications of BLT50,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 470MHz
• Power - Max: 2W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 300mA, 5V
• Current - Collector (ic) (max): 500mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 2000 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934004150115; BLT50 T/R; BLT50 T/R

Philips Semiconductors
PACKAGE OUTLINE
April 1991
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
UHF power transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
y
0.80
0.60
b
p
IEC
e
3.1
2.9
1
b
1
b
0.32
0.22
D
1
e
c
2
b
6.7
6.3
D
p
JEDEC
4
3.7
3.3
E
REFERENCES
3
0
4.6
e
w
B
M
2.3
e
B
scale
1
EIAJ
9
2
c
7.3
6.7
H
E
4 mm
A
1.1
0.7
L
1
p
0.95
0.85
Q
0.2
v
H
E
E
detail X
0.1
w
PROJECTION
EUROPEAN
0.1
y
A
L
p
Q
Product specification
X
ISSUE DATE
96-11-11
97-02-28
v
A
BLT50
M
A
SOT223