BLT50,115 NXP Semiconductors, BLT50,115 Datasheet - Page 3

• Manufacturer Part Number: BLT50,115
• Description: TRANS NPN 7.5V SOT223
• Manufacturer: NXP Semiconductors

Specifications of BLT50,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 470MHz
• Power - Max: 2W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 300mA, 5V
• Current - Collector (ic) (max): 500mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 2000 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934004150115; BLT50 T/R; BLT50 T/R

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
THERMAL RESISTANCE
April 1991
handbook, halfpage
V
V
V
I
I
P
T
T
R
C
CM
stg
j
CBO
CEO
EBO
tot
th j-s(DC)
UHF power transistor
, I
T
SYMBOL
s
C(AV)
s
= 103 C.
= temperature at soldering point of collector tab.
0.5
0.2
0.1
(A)
I C
1
1
SYMBOL
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
collector current
total power dissipation
storage temperature range
operating junction temperature
Fig.2 DC SOAR.
10
from junction to soldering point
PARAMETER
V CE (V)
PARAMETER
MEA217
10
2
3
open emitter
open base
open collector
DC or average value
peak value
f
f
T
(note 1)
P
s
tot
= 103 C
CONDITIONS
1 MHz
1 MHz;
= 2 W; T
CONDITIONS
s
= 103 C
65
MIN.
36
Product specification
MAX.
20
10
3
500
1.5
2
150
175
MAX.
BLT50
K/W
V
V
V
mA
A
W
UNIT
C
C
UNIT