BLT50,115 NXP Semiconductors, BLT50,115 Datasheet - Page 5

• Manufacturer Part Number: BLT50,115
• Description: TRANS NPN 7.5V SOT223
• Manufacturer: NXP Semiconductors

Specifications of BLT50,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 470MHz
• Power - Max: 2W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 300mA, 5V
• Current - Collector (ic) (max): 500mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 2000 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934004150115; BLT50 T/R; BLT50 T/R

Philips Semiconductors
APPLICATION INFORMATION
RF performance at T
Ruggedness in class-B operation
The BLT50 is capable of withstanding a load mismatch
corresponding to VSWR = 50:1 through all phases at rated
output power, up to a supply voltage of 9 V, f = 470 MHz
and T
soldering point of the collector tab.
April 1991
handbook, halfpage
c.w. narrow band
UHF power transistor
V
Fig.4
CE
(dB)
s
G p
= 7.5 V; f = 470 MHz.
16
12
8
4
0
0.6
60 C, where T
Gain and efficiency as functions of load
power, typical values.
OPERATION
MODE OF
1.0
s
60 C in a common emitter class-B test circuit.
s
is the temperature at the
1.4
G p
1.8
470
P L (W)
f (MHz)
MEA219
2.2
100
80
60
40
7.5
5
V
CE
handbook, halfpage
(V)
V
Fig.5
CE
(W)
P L
= 7.5 V; f = 470 MHz.
2
1
0
0
1.2
Load power as a function of drive power,
typical values.
P
L
(W)
100
typ. 11.2
G
10
p
(dB)
P D (mW)
Product specification
typ. 65
MEA220
55
BLT50
200
c
(%)