BFG325W/XR,115 NXP Semiconductors, BFG325W/XR,115 Datasheet - Page 7

• Manufacturer Part Number: BFG325W/XR,115
• Description: TRANS NPN 6V 35MA 14GHZ SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BFG325W/XR,115

• Package / Case: SOT-343R
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 14GHz
• Noise Figure (db Typ @ F): 1.1dB @ 2GHz
• Gain: 18.3dB
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 3V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 15mA @ 3V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 14000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 210 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1978-2; 934057942115; BFG325W/XR T/R

Philips Semiconductors
8. Application information
9397 750 14246
Product data sheet
Table 8:
Sequence
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
SPICE parameters of the BFG325 DIE
Parameter
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
RE
RC
CJE
VJE
MJE
CJC
VJC
MJC
XCJC
FC
TF
XTF
VTF
ITF
PTF
TR
KF
AF
TNOM
EG
XTB
XTI
Q1.AREA
Rev. 01 — 2 February 2005
NPN 14 GHz wideband transistor
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Value
26.6
200
1
40
105
2.3
2.114
10
1
2.5
10
0
1.5
3.6
1.5
2.6
185.6
890
0.294
77.06
601
0.159
1
0.7
8.1
10
1000
150
0
0
0
1
25
1.014
0
8
2.5
BFG325W/XR
Unit
aA
-
-
V
mA
fA
-
-
-
V
A
aA
-
fF
mV
-
fF
mV
-
-
-
ps
-
V
mA
deg
ns
-
-
eV
-
-
-
C
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