BFG325W/XR,115 NXP Semiconductors, BFG325W/XR,115 Datasheet - Page 10

• Manufacturer Part Number: BFG325W/XR,115
• Description: TRANS NPN 6V 35MA 14GHZ SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BFG325W/XR,115

• Package / Case: SOT-343R
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 14GHz
• Noise Figure (db Typ @ F): 1.1dB @ 2GHz
• Gain: 18.3dB
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 3V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 15mA @ 3V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 14000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 210 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1978-2; 934057942115; BFG325W/XR T/R

Philips Semiconductors
10. Revision history
Table 10:
9397 750 14246
Product data sheet
Document ID
BFG325W_XR_1
Revision history
Release date
20050202
Data sheet status
Product data sheet
Rev. 01 — 2 February 2005
Change notice
-
Doc. number
9397 750 14246
NPN 14 GHz wideband transistor
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
BFG325W/XR
Supersedes
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