BFG325W/XR,115 NXP Semiconductors, BFG325W/XR,115 Datasheet - Page 3

• Manufacturer Part Number: BFG325W/XR,115
• Description: TRANS NPN 6V 35MA 14GHZ SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BFG325W/XR,115

• Package / Case: SOT-343R
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 14GHz
• Noise Figure (db Typ @ F): 1.1dB @ 2GHz
• Gain: 18.3dB
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 3V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 15mA @ 3V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 14000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 210 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1978-2; 934057942115; BFG325W/XR T/R

Philips Semiconductors
6. Thermal characteristics
Table 6:
[1]
7. Characteristics
Table 7:
T
[1]
9397 750 14246
Product data sheet
Symbol Parameter
R
Symbol Parameter
I
h
C
C
C
f
G
NF
P
IP3
s
CBO
T
j
FE
L(1dB)
th(j-sp)
CBS
CES
EBS
21
max
= 25 C; unless otherwise specified.
2
T
G
K is the Rollet stability factor:
MSG = maximum stable gain.
sp
max
is the temperature at the soldering point of the collector pin.
is the maximum power gain, if K > 1. If K < 1 then G
thermal resistance from junction to solder point
collector-base cut-off current
DC current gain
collector-base capacitance
collector-emitter capacitance
emitter-base capacitance
transition frequency
maximum power gain
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
Thermal characteristics
Characteristics
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol
I
P
T
T
C
stg
j
tot
T
sp
K
[1]
is the temperature at the soldering point of the collector pin.
=
1
---------------------------------------------------------- -
Parameter
collector current (DC)
total power dissipation
storage temperature
junction temperature
Limiting values
+
Ds
2
2
Conditions
I
I
V
V
V
I
T
I
T
I
Z
I
T
I
T
s
E
C
C
C
C
C
C
–
21
amb
amb
S
s
amb
amb
CB
CE
EB
f = 1.8 GHz
f = 3 GHz
= 0 A; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
=
s
= Z
11
= 5 V; f = 1 MHz; emitter grounded
= 5 V; f = 1 MHz; base grounded
= 0.5 V; f = 1 MHz; collector grounded
Rev. 01 — 2 February 2005
= 25 C
= 25 C
= 25 C; Z
= 25 C; Z
opt
2
L
s
12
–
= 50
; I
…continued
s
C
CB
22
max
= 3 mA; V
2
= 5 V
CE
CE
CE
CE
CE
CE
= MSG, see
where
S
S
= 3 V
= 3 V; f = 1 GHz;
= 3 V; f = 1.8 GHz;
= 3 V; T
= 3 V; f = 1.8 GHz;
= 3 V; f = 1.8 GHz;
= Z
= Z
L
L
Ds
CE
= 50
= 50
Conditions
T
sp
amb
= 3 V; f = 2 GHz
=
Figure
Conditions
T
sp
s
90 C
= 25 C;
11
4.
90 C
s
22
–
s
12
NPN 14 GHz wideband transistor
s
21
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
.
BFG325W/XR
Min
-
60
-
-
-
-
-
-
-
-
-
-
[1]
Min
-
-
-
Typ
-
100
0.27
0.22
0.49
14
18.3
14
10
1.1
8.7
19.4
65
[1]
Typ
403
Max
35
210
+175
175
Max
15
200
0.4
-
-
-
-
-
-
-
-
-
Unit
K/W
Unit
mA
mW
3 of 12
C
C
Unit
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dBm
dBm