BF 1005S E6327 Infineon Technologies, BF 1005S E6327 Datasheet - Page 2

• Manufacturer Part Number: BF 1005S E6327
• Description: MOSFET N-CH 8V 25MA SOT-143
• Manufacturer: Infineon Technologies

Specifications of BF 1005S E6327

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 22dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.6dB
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Channel Type: N
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 22@5VdB
• Noise Figure (max): 2.1dB
• Frequency (max): 1GHz
• Package Type: SOT-143
• Pin Count: 3 +Tab
• Forward Transconductance (typ): 0.3S
• Input Capacitance (typ)@vds: 2.4@5V@Gate 1pF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Current - Test: -
• Lead Free Status / Rohs Status: Compliant
• Other names: BF1005SE6327XT; SP000010949

Thermal Resistance
Parameter
Channel - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Drain-source breakdown voltage
I
Gate1-source breakdown voltage
+ I
Gate2 source breakdown voltage
Gate1-source leakage current
V
Gate 2 source leakage current
Drain current
V
Operating current (selfbiased)
V
Gate2-source pinch-off voltage
V
1
D
For calculation of R thJA please refer to Application Note Thermal Resistance
I
V
G1S
DS
DS
DS
G1S
G2S
= 650 µA, V
G2S
= 5 V, V
= 5 V, V
= 5 V, I
= 6 V, V
= 10 mA, V
= 10 mA, V
= 8 V, V
D
G1S
G2S
G2S
= 100 µA
G1S
G1S
= 0 , V
= 4 V
G1S
G2S
= 0
= 0 , V
= 0 , V
= 0 , V
= 0 , V
G2S
1)
G2S
DS
= 4 V
DS
DS
= 0
= 0
A
= 0
= 0
= 25°C, unless otherwise specified
2
Symbol
V
+ V
+ I
I
I
V
DSS
DSO
V
I
(BR)DS
G2S(p)
G1SS
G2SS
Symbol
R
(BR)G1SS
(BR)G2SS
thchs
min.
12
8
8
8
-
-
-
-
Values
Value
typ.
100
13
370
1
-
-
-
-
-
max.
BF1005S...
800
12
13
50
16
2007-04-20
-
-
-
Unit
V
µA
nA
µA
mA
V
Unit
K/W