BF 1005S E6327 Infineon Technologies, BF 1005S E6327 Datasheet
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Manufacturer Part Number
BF 1005S E6327
Description
MOSFET N-CH 8V 25MA SOT-143
Manufacturer
Infineon Technologies
Specifications of BF 1005S E6327
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
N-Channel
Frequency
800MHz
Gain
22dB
Voltage - Rated
8V
Current Rating
25mA
Noise Figure
1.6dB
Voltage - Test
5V
Configuration
Single Dual Gate
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
3 V
Continuous Drain Current
0.025 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Channel Type
N
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
22@5VdB
Noise Figure (max)
2.1dB
Frequency (max)
1GHz
Package Type
SOT-143
Pin Count
3 +Tab
Forward Transconductance (typ)
0.3S
Input Capacitance (typ)@vds
2.4@5V@Gate 1pF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Current - Test
-
Lead Free Status / Rohs Status
Compliant
Other names
BF1005SE6327XT SP000010949
Silicon N-Channel MOSFET Tetrode
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BF1005S
BF1005SR
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
T
Storage temperature
Channel temperature
1
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
Pb-containing package may be available upon special request
S
For low noise, high gain controlled
Operating voltage 5 V
Integrated biasing network
Pb-free (RoHS compliant) package
Qualified according AEC Q101
input stages up to 1 GHz
AGC
Input
76 °C
RF
G2
G1
Package
SOT143
SOT143R
GND
Drain
1=S
1=D
RF Output
+ DC
1)
2=D
2=S
1
Pin Configuration
3=G2
3=G1
Symbol
V
I
+V
P
T
T
D
I
stg
ch
DS
tot
G1/2SM
G1SE
4=G1
4=G2
-
-
-55 ... 150
Value
200
150
25
10
8
3
-
-
BF1005S...
2007-04-20
Marking
NZs
NZs
Unit
V
mA
V
mW
°C
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BF 1005S E6327 Summary of contents
Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages GHz Operating voltage 5 V Integrated biasing network Pb-free (RoHS compliant) package Qualified according AEC Q101 G2 AGC G1 RF Input GND ESD (Electrostatic discharge) ...
Thermal Resistance Parameter 1) Channel - soldering point Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage I = 650 µ G1S G2S Gate1-source breakdown voltage + mA ...
Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Forward transconductance 4 G2S Gate1 input capacitance MHz DS G2S ...
Total power dissipation P BF1005S, BF1005SR 220 mW 180 160 140 120 100 Drain current G2S ...
Forward transfer admittance | G2S 0.5 1 1.5 2 2.5 Output capacitance C dss f = 200MHz 1.5 1 0.5 ...
Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 0.25 B ...
Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143R 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 1.7 0.2 ...
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...
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