BF 517 E6327 Infineon Technologies, BF 517 E6327 Datasheet

BF 517 E6327

Manufacturer Part Number

BF 517 E6327

Description

TRANSISTOR RF NPN 15V SOT-23

Manufacturer

Infineon Technologies

Datasheet

1.BF_517_E6327.pdf (7 pages)

Specifications of BF 517 E6327

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Transistor Type

NPN

Current - Collector (ic) (max)

25mA

Voltage - Collector Emitter Breakdown (max)

15V

Vce Saturation (max) @ Ib, Ic

400mV @ 1mA, 10mA

Dc Current Gain (hfe) (min) @ Ic, Vce

40 @ 2mA, 1V

Power - Max

280mW

Frequency - Transition

2.5GHz

Mounting Type

Surface Mount

Configuration

Single

Transistor Polarity

NPN

Mounting Style

SMD/SMT

Maximum Operating Frequency

2.5 GHz

Collector- Emitter Voltage Vceo Max

15 V

Continuous Collector Current

0.025 A

Power Dissipation

280 mW

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

BF517E6327XT
SP000010958

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NPN Silicon RF Transistor

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BF517

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Peak collector current

Total power dissipation

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point

Pb-containing package may be available upon special request

T S is measured on the collector lead at the soldering point to the pcb

For calculation of R

For amplifier and oscillator

Pb-free (RoHS compliant) package

Qualified according AEC Q101

applications in TV-tuners

55 °C

thJA

please refer to Application Note Thermal Resistance

Marking

LRs

1 = B

Symbol

Pin Configuration

CEO

CBO

EBO

tot

stg

thJS

2 = E

3 = C

-65 ... 150

Value

280

150

2.5

340

Package

SOT23

2007-04-20

BF517

Unit

°C

Unit

K/W

Related parts for BF 517 E6327

BF 517 E6327 Summary of contents

Page 1

NPN Silicon RF Transistor For amplifier and oscillator applications in TV-tuners Pb-free (RoHS compliant) package Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF517 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 200 MHz mA 200 MHz C ...

Page 4

Total power dissipation P 320 mW 240 200 160 120 Permissible Pulse Load totmax totDC 0.005 0.01 0.02 0.05 ...

Page 5

Transition frequency parameter CE 3 GHz 2 1 10V 0. BF517 2007-04-20 ...

Page 6

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 7

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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