BLF6G38-50,112 NXP Semiconductors, BLF6G38-50,112 Datasheet - Page 6

• Manufacturer Part Number: BLF6G38-50,112
• Description: IC WIMAX 3.8GHZ SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-50,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 3.4GHz ~ 3.6GHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 16.5A
• Current - Test: 450mA
• Voltage - Test: 28V
• Power - Output: 9W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 16.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 70W(Typ)
• Power Gain (typ)@vds: 14@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 5.6S
• Drain Source Resistance (max): 290@6.15Vmohm
• Reverse Capacitance (typ): 1.17@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 23%
• Mounting: Screw
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061173112; BLF6G38-50; BLF6G38-50

NXP Semiconductors
BLF6G38-50_BLF6G38LS-50
Product data sheet
Fig 6.
Fig 8.
(dB)
(dB)
G
G
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
p
p
18
16
14
12
10
16
15
14
13
12
10
10
V
N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel
Bandwidth = 1.23 MHz; IBW = 30 kHz.
Power gain and drain efficiency as functions
of load power; typical values
V
PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth
= 1.23 MHz; IBW = 30 kHz.
Power gain as a function of load power; typical
values
−1
−1
DS
DS
= 28 V; I
= 28 V; I
Dq
Dq
1
1
= 450 mA; f = 3500 MHz; Single Carrier
= 450 mA; Single Carrier N-CDMA;
G
η
(2)
(1)
(3)
D
p
10
10
P
P
All information provided in this document is subject to legal disclaimers.
L
L
001aah400
001aah402
(W)
(W)
10
10
Rev. 02 — 1 June 2010
2
2
40
30
20
10
0
(%)
η
D
BLF6G38-50; BLF6G38LS-50
Fig 7.
Fig 9.
ACPR
(dBc)
(W)
P
(1) Low frequency component
(2) High frequency component
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
−30
−40
−50
−60
−70
−80
i
1.5
1.0
0.5
0
10
10
V
N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel
Bandwidth = 1.23 MHz; IBW = 30 kHz.
Adjacent channel power ratio as a function of
load power; typical values
V
PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth
= 1.23 MHz; IBW = 30 kHz.
Input power as a function of load power;
typical values
−1
−1
DS
DS
ACPR
ACPR
ACPR
= 28 V; I
= 28 V; I
885k
1500k
1980k
Dq
Dq
WiMAX power LDMOS transistor
1
1
= 450 mA; f = 3500 MHz; Single Carrier
= 450 mA; Single Carrier N-CDMA;
(1)
(2)
(1)
(2)
(3)
(2)
(1)
(1)
(2)
10
10
© NXP B.V. 2010. All rights reserved.
P
P
L
L
001aah401
001aah403
(W)
(W)
10
10
2
2
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