BLF6G38-50,112 NXP Semiconductors, BLF6G38-50,112 Datasheet - Page 2

• Manufacturer Part Number: BLF6G38-50,112
• Description: IC WIMAX 3.8GHZ SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-50,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 3.4GHz ~ 3.6GHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 16.5A
• Current - Test: 450mA
• Voltage - Test: 28V
• Power - Output: 9W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 16.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 70W(Typ)
• Power Gain (typ)@vds: 14@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 5.6S
• Drain Source Resistance (max): 290@6.15Vmohm
• Reverse Capacitance (typ): 1.17@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 23%
• Mounting: Screw
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061173112; BLF6G38-50; BLF6G38-50

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G38-50_BLF6G38LS-50
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G38-50 (SOT502A)
1
2
3
BLF6G38LS-50 (SOT502B)
1
2
3
Type number
BLF6G38-50
BLF6G38LS-50
Symbol
V
V
I
T
T
D
stg
j
DS
GS
RF power amplifiers for base stations and multicarrier applications in the
3400 MHz to 3800 MHz frequency range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
-
Package
Name
-
Rev. 02 — 1 June 2010
Description
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
BLF6G38-50; BLF6G38LS-50
Conditions
[1]
[1]
Simplified outline
WiMAX power LDMOS transistor
1
2
1
2
3
3
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
2
2
Max
65
+13
16.5
+150
200
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
2 of 13
Unit
V
V
A
°C
°C