ATF-331M4-BLK Avago Technologies US Inc., ATF-331M4-BLK Datasheet - Page 5

• Manufacturer Part Number: ATF-331M4-BLK
• Description: IC PHEMT LOW NOISE 2GHZ MINIPAK
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-331M4-BLK

• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 15dB
• Voltage - Rated: 5.5V
• Current Rating: 305mA
• Noise Figure: 0.6dB
• Current - Test: 60mA
• Voltage - Test: 4V
• Power - Output: 19dBm
• Package / Case: 4-MiniPak (1412)
• Power Dissipation Pd: 400mW
• No. Of Pins: 4
• Peak Reflow Compatible (260 C): No
• Frequency Max: 2GHz
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

5
ATF-331M4 Typical Performance Curves, continued
Notes:
1. Measurements made on fixed tuned
Figure 15. P1dB, OIP3 vs. Frequency and
Temp at Vd = 4V, Ids = 60 mA.
Figure 12. Fmin vs. Frequency at 4 V, 60 mA.
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
production test board that was tuned for
optimal gain match with reasonable noise
figure at 4V 60 mA bias. This circuit
represents a trade-off between an optimal
noise match, maximum gain match and a
realizable match based on production test
board requirements. Circuit losses have been
de-embedded from actual measurements.
35
30
25
20
15
10
0
5
0
0
0
1
2
2
FREQUENCY (GHz)
FREQUENCY (GHz)
3
4
4
6
5
6
8
85°C
25°C
-40°C
7
10
8
2. Quiescent drain current, Idsq, is set with zero
Figure 16. OIP3, P1dB, NF and Gain vs.
Bias
Figure 13. Associated Gain vs. Frequency
at 4V, 60 mA.
RF drive applied. As P1dB is approached, the
drain current may increase or decrease
depending on frequency and dc bias point. At
lower values of Idsq the device is running
closer to class B as power output approaches
P1dB. This results in higher P1dB and higher
PAE (power added efficiency) when compared
to a device that is driven by a constant
current source as is typically done with active
biasing.
30
25
20
15
10
35
30
25
20
15
10
5
0
5
0
0
0
[1,2]
at 3.9 GHz.
20
2
FREQUENCY (GHz)
40
4
I
dsq
(mA)
60
6
80
8
P1dB
OIP3
Gain
NF
100
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Figure 14. Fmin & Ga vs. Frequency and Temp.
Vd = 4V, Ids = 60 mA.
Figure 17. OIP3, P1dB, NF at 5.8 GHz.
25
20
15
10
35
30
25
20
15
10
5
5
0
0
0
20
2
85°C
25°C
-40°C
FREQUENCY (GHz)
40
I
dsq
(mA)
4
60
6
80
P1dB
OIP3
Gain
NF
100
8
2.0
1.5
1.0
0.5
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0