ATF-331M4-BLK Avago Technologies US Inc., ATF-331M4-BLK Datasheet - Page 4

• Manufacturer Part Number: ATF-331M4-BLK
• Description: IC PHEMT LOW NOISE 2GHZ MINIPAK
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-331M4-BLK

• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 15dB
• Voltage - Rated: 5.5V
• Current Rating: 305mA
• Noise Figure: 0.6dB
• Current - Test: 60mA
• Voltage - Test: 4V
• Power - Output: 19dBm
• Package / Case: 4-MiniPak (1412)
• Power Dissipation Pd: 400mW
• No. Of Pins: 4
• Peak Reflow Compatible (260 C): No
• Frequency Max: 2GHz
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
ATF-331M4 Typical Performance Curves
Notes:
1. Measurements made on fixed tuned
Figure 6. OIP3, IIP3 & Bias
Figure 9. P1dB vs. Bias
40
30
20
10
25
20
15
10
production test board that was tuned for
optimal gain match with reasonable noise
figure at 4V 60 mA bias. This circuit
represents a trade-off between an optimal
noise match, maximum gain match and a
realizable match based on production test
board requirements. Circuit losses have been
de-embedded from actual measurements.
0
5
0
0
0
20
20
2 V
3 V
4 V
2 V
3 V
4 V
40
40
I
I
dsq
ds
(mA)
(mA)
[1]
900 MHz.
60
60
[1]
at 2 GHz.
80
80
100
100
2. Quiescent drain current, Idsq, is set with zero
Figure 7. OIP3, IIP3 & Bias
Figure 10. NF & Gain vs. Bias
40
30
20
10
16
15
14
13
12
11
10
RF drive applied. As P1dB is approached, the
drain current may increase or decrease
depending on frequency and dc bias point. At
lower values of Idsq the device is running
closer to class B as power output approaches
P1dB. This results in higher P1dB and higher
PAE (power added efficiency) when compared
to a device that is driven by a constant
current source as is typically done with active
biasing.
0
0
0
20
20
2 V
3 V
4 V
2 V
3 V
4 V
40
40
I
I
ds
d
(mA)
(mA)
60
60
[1]
at 900 MHz.
[1]
at 2 GHz.
80
80
100
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Figure 8. P1dB vs. Bias
Figure 11. NF & Gain vs. Bias
25
20
15
10
22
21
20
19
18
17
16
5
0
0
0
20
20
2 V
3 V
4 V
2 V
3 V
4 V
40
40
I
dsq
I
d
(mA)
60
(mA)
[1,2]
60
2 GHz.
80
[1]
at 900 MHz.
80
100
100
120
1.4
1.2
1.0
0.8
0.6
0.4
0.2