ATF-331M4-BLK Avago Technologies US Inc., ATF-331M4-BLK Datasheet - Page 2

• Manufacturer Part Number: ATF-331M4-BLK
• Description: IC PHEMT LOW NOISE 2GHZ MINIPAK
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-331M4-BLK

• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 15dB
• Voltage - Rated: 5.5V
• Current Rating: 305mA
• Noise Figure: 0.6dB
• Current - Test: 60mA
• Voltage - Test: 4V
• Power - Output: 19dBm
• Package / Case: 4-MiniPak (1412)
• Power Dissipation Pd: 400mW
• No. Of Pins: 4
• Peak Reflow Compatible (260 C): No
• Frequency Max: 2GHz
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2
ATF-331M4 Absolute Maximum Ratings
I
P
P
T
T
Product Consistency Distribution Charts
Notes:
8. Distribution data sample size is 349 samples from 4 different wafers. Future wafers allocated to this product may have nominal values anywhere within
9. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on
Symbol
V
V
V
θ
100
DS
diss
in max.
CH
STG
80
60
40
20
DS
GS
GD
jc
Figure 2. NF @ 2 GHz, 4 V, 60 mA.
LSL = 28.5, Nominal = 0.6, USL = 0.8.
0
Figure 1. Typical Pulsed I-V Curves
(V
the upper and lower spec limits.
production test requirements. Circuit losses have been de-embedded from actual measurements.
500
400
300
200
100
0.2
GS
0
= -0.2 V per step)
0
0.3
-3 Std
0.4
2
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate Drain Voltage
Drain Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
NF (dBm)
0.5
+0.6 V
V
DS
0.6
4
(V)
0 V
0.7
[2]
Cpk = 1.05
Stdev = 0.07
+3 Std
6
0.8
-0.6 V
[2]
[7]
[6]
[2]
[5]
.
[2]
0.9
[4]
8
[1]
[8, 9]
150
120
Note:
7. Under large signal conditions, V
90
60
30
Figure 3. OIP3 @ 2 GHz, 4 V, 60 mA.
LSL = 28.5, Nominal = 31.0, USL = 36.0
0
positive and the drain current may exceed
I
as the Maximum P
not exceeded.
dss
28
-3 Std
. These conditions are acceptable as long
Units
V
V
V
mA
mW
dBm
°C
°C
°C/W
30
OIP3 (dBm)
diss
32
and P
Absolute
Maximum
5.5
-5
-5
I
400
20
160
-65 to 160
200
diss
in max
[3]
Cpk = 1.00
Stdev = 1.07
34
GS
+3 Std
ratings are
may swing
36
120
100
80
60
40
20
Notes:
1. Operation of this device above any one of
2. Assumes DC quiescent conditions.
3. V
4. Source lead temperature is 25°C. Derate
5. Please refer to failure rates in reliability data
6. Thermal resistance measured using 150°C
Figure 4. Gain @ 2 GHz, 4 V, 60 mA.
LSL = 13.5, Nominal = 15.0, USL = 16.5
0
these parameters may cause permanent
damage.
5 mW/°C for T
sheet to assess the reliability impact of
running devices above a channel temperature
of 140°C.
Liquid Crystal Measurement method.
13
GS
= 0 V
14
-3 Std
L
GAIN (dB)
> 40°C.
15
+3 Std
Cpk = 4.37
Stdev = 1.11
16
17