BF1214,115 NXP Semiconductors, BF1214,115 Datasheet - Page 8

MOSFET N-CH DUAL GATE 6V UMT6

BF1214,115

Manufacturer Part Number
BF1214,115
Description
MOSFET N-CH DUAL GATE 6V UMT6
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF1214,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
N-Channel Dual Gate
Frequency
400MHz
Gain
31dB
Voltage - Rated
6V
Current Rating
30mA
Noise Figure
0.9dB
Current - Test
18mA
Voltage - Test
5V
Configuration
Dual
Continuous Drain Current
30 mA
Drain-source Breakdown Voltage
6 V
Gate-source Breakdown Voltage
6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Application
VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
6V
Power Gain (typ)@vds
35@5VdB
Noise Figure (max)
1.8dB
Package Type
SOT-363
Pin Count
6
Input Capacitance (typ)@vds
2.2@5V@Gate 1/3.5@5V@Gate 2pF
Output Capacitance (typ)@vds
0.8@5VpF
Reverse Capacitance (typ)
0.02@5VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
2
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934061308115
BF1214 T/R
BF1214 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BF1214,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
BF1214_1
Product data sheet
Fig 8. Drain current as a function of V
(mA)
(1) R
(2) R
(3) R
(4) R
(5) R
(6) R
(7) R
(8) R
(9) R
I
D
25
20
15
10
5
0
V
typical values
0
G2-S
G1
G1
G1
G1
G1
G1
G1
G1
G1
= 47 k .
= 56 k .
= 68 k .
= 82 k .
= 100 k .
= 120 k .
= 150 k .
= 180 k .
= 220 k .
= 4 V; T
1
j
= 25 C.
2
3
(1)
(2)
(3)
(4)
(5)
V
GG
4
DS
001aag999
= V
and V
DS
(6)
(7)
(8)
(9)
Rev. 01 — 30 October 2007
(V)
5
GG
;
Fig 9. Drain current as a function of gate2 voltage;
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
I
D
30
20
10
0
T
typical values
0
j
GG
GG
GG
GG
GG
= 25 C; R
= 5.0 V.
= 4.5 V.
= 4.0 V.
= 3.5 V.
= 3.0 V.
1
Dual N-channel dual gate MOSFET
G1
= 68 k (connected to V
2
3
© NXP B.V. 2007. All rights reserved.
4
V
001aah000
BF1214
G2-S
GG
).
(1)
(2)
(3)
(4)
(5)
(V)
5
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