BF1214,115 NXP Semiconductors, BF1214,115 Datasheet - Page 5

• Manufacturer Part Number: BF1214,115
• Description: MOSFET N-CH DUAL GATE 6V UMT6
• Manufacturer: NXP Semiconductors

Specifications of BF1214,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 31dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 18mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 35@5VdB
• Noise Figure (max): 1.8dB
• Package Type: SOT-363
• Pin Count: 6
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/3.5@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.8@5VpF
• Reverse Capacitance (typ): 0.02@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061308115; BF1214 T/R; BF1214 T/R

NXP Semiconductors
8. Dynamic characteristics
Table 8.
Common source; T
[1]
[2]
BF1214_1
Product data sheet
Symbol Parameter
C
C
C
C
G
NF
Xmod
y
fs
iss(G1)
iss(G2)
oss
rss
tr
Calculated from S-parameters.
Measured in
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance f = 100 MHz
transducer power gain
noise figure
cross modulation
Dynamic characteristics for amplifier A and B
Figure 24
amb
= 25 C; V
test circuit.
G2-S
= 4 V; V
Conditions
f = 100 MHz; T
f = 100 MHz
f = 100 MHz
f = 100 MHz
amplifier A; B
amplifier B; B
f = 11 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
input level for k = 1 %; f
f
unw
f = 200 MHz; G
f = 400 MHz; G
f = 800 MHz; G
f = 200 MHz; G
f = 400 MHz; G
f = 800 MHz; G
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
= 60 MHz
DS
= 5 V; I
Rev. 01 — 30 October 2007
S
S
S
j
S
S
= B
= B
= 20 mS; B
= 25 C
D
= Y
= Y
S
S
S
S
S
S
= 18 mA.
S(opt)
S(opt)
= 2 mS; G
= 2 mS; G
= 3.3 mS; G
= 2 mS; G
= 2 mS; G
= 3.3 mS; G
S(opt)
S(opt)
; B
; B
w
= 50 MHz;
L
L
S
= B
= B
= 0 S
L
L
L
L
L(opt)
= 0.5 mS
= 1 mS
L(opt)
= 0.5 mS
= 1 mS
L
L
= 1 mS
= 1 mS
Dual N-channel dual gate MOSFET
[1]
[1]
[1]
[1]
[1]
[1]
[2]
Min
27
-
-
-
-
31
27
22
31
29
25
-
-
-
90
-
-
102
Typ
32
2.2
3.5
0.8
20
35
31
26
35
33
29
3.0
0.9
1.2
-
94
99
105
© NXP B.V. 2007. All rights reserved.
BF1214
Max
37
2.7
-
-
-
39
35
30
39
37
33
-
1.5
1.8
-
-
-
-
Unit
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB V
dB V
dB V
dB V
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