BF1214 T/R NXP Semiconductors, BF1214 T/R Datasheet

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BF1214 T/R

Manufacturer Part Number
BF1214 T/R
Description
RF MOSFET Small Signal TAPE-7 MOS-RFSS
Manufacturer
NXP Semiconductors
Datasheet
1.BF1214_TR.pdf (18 pages)

Specifications of BF1214 T/R

Configuration
Dual
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
6 V
Gate-source Breakdown Voltage
6 V
Continuous Drain Current
0.03 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
UMT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BF1214,115
1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.
I
I
I
I
I
I
BF1214
Dual N-channel dual gate MOSFET
Rev. 01 — 30 October 2007
Two low noise gain controlled amplifiers in a single package; both with a partly
integrated bias
Superior cross modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
Both amplifiers optimized for VHF applications, yet suitable for VHF and UHF
applications
Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
digital and analog television tuners
professional communication equipment
Product data sheet

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BF1214 T/R Summary of contents

Page 1

BF1214 Dual N-channel dual gate MOSFET Rev. 01 — 30 October 2007 1. Product profile 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are ...

Page 2

... NXP Semiconductors 1.4 Quick reference data Table 1. Symbol Parameter tot iss(G1) C rss NF Xmod [2] Calculated from S-parameters. [3] Measured in 2. Pinning information Table 2. Pin Ordering information Table 3. Type number BF1214 BF1214_1 Product data sheet Quick reference data for amplifier A and B drain-source voltage ...

Page 3

... NXP Semiconductors 4. Marking Table 4. Type number BF1214 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per MOSFET tot T stg the temperature at the soldering point of the source lead. sp Fig 1. Power derating curve BF1214_1 Product data sheet ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) 7. Static characteristics Table 7. Static characteristics Symbol Parameter Per MOSFET; unless otherwise specified V drain-source breakdown voltage (BR)DSS V gate1-source breakdown voltage (BR)G1-SS V gate2-source breakdown voltage (BR)G2-SS ...

Page 5

... NXP Semiconductors 8. Dynamic characteristics Table 8. Dynamic characteristics for amplifier A and B Common source amb Symbol Parameter y forward transfer admittance fs C input capacitance at gate1 iss(G1) C input capacitance at gate2 iss(G2) C output capacitance oss C reverse transfer capacitance f = 100 MHz rss G transducer power gain tr NF noise fi ...

Page 6

... NXP Semiconductors 8.1 Graphs for amplifier A and (mA 0.5 1.0 ( 4.0 V. G2-S ( 3.5 V. G2-S ( 3.0 V. G2-S ( 2.5 V. G2-S ( 2.0 V. G2-S ( 1.5 V. G2-S ( 1 Fig 2. Transfer characteristics; typical values BF1214_1 Product data sheet 001aag993 (mA) (1) (2) 30 (3) (4) 20 (5) (6) 10 (7) 0 1.5 2 ...

Page 7

... NXP Semiconductors 120 0.5 1.0 ( 4.0 V. G2-S ( 3.5 V. G2-S ( 3.0 V. G2-S ( 2.5 V. G2-S ( 2.0 V. G2-S ( 1.5 V. G2-S ( 1 Fig 4. Gate1 current as a function of gate1 voltage; typical values (mA G2-S j Fig 6. Drain current as a function of gate1 current; typical values BF1214_1 Product data sheet ...

Page 8

... NXP Semiconductors ( 100 ( 120 ( 150 ( 180 ( 220 G2-S j Fig 8. Drain current as a function of V typical values BF1214_1 Product data sheet 001aag999 (1) (2) (mA) (3) (4) (5) (6) (7) ( (1) V (2) V (3) V (4) V (5) V and V ; Fig 9. Drain current as a function of gate2 voltage Rev. 01 — 30 October 2007 ...

Page 9

... NXP Semiconductors 8.2 Graphs for amplifi gain reduction (dB DS(A) GG D(nom)( MHz; T G1(A) w see Figure 24. Fig 10. Amplifier A: typical gain reduction as a function of the AGC voltage; typical values DS(A) GG G2-S(nom) Fig 12. Amplifier A: typical drain current as a function of gain reduction; typical values ...

Page 10

... NXP Semiconductors (mS DS(A) G2 mA. D(A) Fig 13. Amplifier A: input admittance as a function of frequency; typical values DS(A) G2 mA. D(A) Fig 15. Amplifier A: reverse transfer admittance and phase as a function of frequency; typical values BF1214_1 Product data sheet 001aah004 (mS (MHz DS(B) Fig 14. Amplifier A: forward transfer admittance and ...

Page 11

... NXP Semiconductors 8.2.1 Scattering parameters for amplifier A Table 9. Scattering parameters for amplifi mA; V DS(A) G2-S D(A) f (MHz Magnitude Angle (ratio) (deg) 40 0.9877 3.07 100 0.9888 7.81 200 0.9852 15.61 300 0.9766 23.41 400 0.9643 31.14 500 0.9504 38.62 600 ...

Page 12

... NXP Semiconductors 8.3 Graphs for amplifi gain reduction (dB DS(B) GG D(nom)( MHz; T G1(B) w see Figure 24. Fig 17. Amplifier B: typical gain reduction as a function of the AGC voltage; typical values DS(B) GG G2-S(nom) Fig 19. Amplifier B: typical drain current as a function of gain reduction; typical values ...

Page 13

... NXP Semiconductors (mS DS(B) G2 mA. D(B) Fig 20. Amplifier B: input admittance as a function of frequency; typical values DS(B) G2 mA. D(B) Fig 22. Amplifier B: reverse transfer admittance and phase as a function of frequency; typical values BF1214_1 Product data sheet 001aah011 (mS (MHz DS(A) Fig 21. Amplifier B: forward transfer admittance and ...

Page 14

... NXP Semiconductors 8.3.1 Scattering parameters for amplifier B Table 11. Scattering parameters for amplifi mA; V DS(B) G2-S D(B) f (MHz Magnitude Angle (ratio) (deg) 40 0.9836 2.92 100 0.9890 7.68 200 0.9869 15.32 300 0.9801 23.00 400 0.9704 30.69 500 0.9595 38.13 600 ...

Page 15

... NXP Semiconductors 10. Package outline Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 Fig 25. Package outline SOT363 BF1214_1 Product data sheet scale 2.2 1.35 2.2 1 ...

Page 16

... NXP Semiconductors 11. Abbreviations Table 13. Acronym AGC DC MOSFET UHF VHF 12. Revision history Table 14. Revision history Document ID Release date BF1214_1 20071030 BF1214_1 Product data sheet Abbreviations Description Automatic Gain Control Direct Current Metal-Oxide-Semiconductor Field-Effect Transistor Ultra High Frequency Very High Frequency Data sheet status Product data sheet Rev. 01 — ...

Page 17

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

Page 18

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 5 8.1 Graphs for amplifier A and 8.2 Graphs for amplifi 8.2.1 Scattering parameters for amplifi ...

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