BLF578,112 NXP Semiconductors, BLF578,112 Datasheet - Page 9

• Manufacturer Part Number: BLF578,112
• Description: TRANSISTOR PWR LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF578,112

• Transistor Type: LDMOS
• Frequency: 108MHz
• Gain: 26dB
• Voltage - Rated: 110V
• Current Rating: 88A
• Current - Test: 40mA
• Voltage - Test: 50V
• Power - Output: 1000W
• Package / Case: SOT539A
• Application: HF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 88A
• Drain Source Voltage (max): 110V
• Output Power (max): 1200W
• Power Gain (typ)@vds: 26@50V/24@50VdB
• Frequency (max): 225MHz
• Package Type: LDMOST
• Pin Count: 5
• Drain Source Resistance (max): 70(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 403@50VpF
• Output Capacitance (typ)@vds: 138@50VpF
• Reverse Capacitance (typ): 3@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 71%
• Mounting: Screw
• Mode Of Operation: CW/Pulsed RF
• Number Of Elements: 2
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5103-5; 934063155112; BLF578,112

NXP Semiconductors
Table 9.
For production test circuit, see
Printed-Circuit Board (PCB): Rogers 5880;
thickness copper plating = 35
[1]
BLF578_2
Product data sheet
Component
C1, C2, C11, C12
C2, C3, C27, C28
C5, C7, C8, C21, C22
C6
C9, C10, C13, C15
C14
C16, C17
C18
C19
C20
C23
C24
C25, C26
L1, L2
L3, L12
L4, L5, L10, L11
L6, L7, L8, L9
R1, R2
R3, R4
R5, R6
T1, T2
American Technical Ceramics type 100B or capacitor of same quality.
List of components
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
3 turns 1 mm copper wire
stripline
stripline
stripline
metal film resistor
metal film resistor
metal film resistor
semi rigid coax
μ
Figure 11
m.
and
ε
r
Figure
= 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
Rev. 02 — 4 February 2010
12.
Value
4.7 μF
100 nF
1 nF
30 pF
62 pF
36 pF
24 pF
30 pF
27 pF
9.1 pF
13 pF
16 pF
220 μF; 63 V
D = 2 mm; length = 3 mm
-
-
-
2 Ω; 0.6 W
20 Ω; 0.6 W
1 Ω; 0.6 W
50 Ω; 58 mm
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Remarks
TDK4532X7R1E475Mt020U
Murata X7R 250 V
(L × W) 15 mm × 2.4 mm
(L × W) 47 mm × 10 mm
(L × W) 8 mm × 15 mm
EZ-141-AL-TP-M17
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
BLF578
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