BLF578,112 NXP Semiconductors, BLF578,112 Datasheet - Page 6

• Manufacturer Part Number: BLF578,112
• Description: TRANSISTOR PWR LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF578,112

• Transistor Type: LDMOS
• Frequency: 108MHz
• Gain: 26dB
• Voltage - Rated: 110V
• Current Rating: 88A
• Current - Test: 40mA
• Voltage - Test: 50V
• Power - Output: 1000W
• Package / Case: SOT539A
• Application: HF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 88A
• Drain Source Voltage (max): 110V
• Output Power (max): 1200W
• Power Gain (typ)@vds: 26@50V/24@50VdB
• Frequency (max): 225MHz
• Package Type: LDMOST
• Pin Count: 5
• Drain Source Resistance (max): 70(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 403@50VpF
• Output Capacitance (typ)@vds: 138@50VpF
• Reverse Capacitance (typ): 3@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 71%
• Mounting: Screw
• Mode Of Operation: CW/Pulsed RF
• Number Of Elements: 2
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5103-5; 934063155112; BLF578,112

NXP Semiconductors
8. Test information
BLF578_2
Product data sheet
Fig 5.
(dB)
G
p
26
24
22
20
18
100
V
δ = 20 %.
Power gain and drain efficiency as function of
load power; typical values
DS
= 50 V; I
8.2.1 1-Tone CW pulsed
400
8.1 Impedance information
8.2 RF performance
G
η
D
p
Dq
= 40 mA; f = 225 MHz; t
Table 8.
Simulated Z
The following figures are measured in a class-AB production test circuit.
f
MHz
225
700
Fig 4.
1000
Definition of transistor impedance
Typical impedance
S
and Z
1300
001aak926
P
L
L
p
test circuit impedances.
(W)
= 100 μs;
1600
Rev. 02 — 4 February 2010
0
80
60
40
20
(%)
η
D
Z
Ω
3.2 + j2.6
S
Fig 6.
gate
(dBm)
Z
P
S
(1) P
(2) P
L
65
64
63
62
61
60
59
58
34
V
δ = 20 %.
Load Power as function of source power;
typical values
DS
L(1dB)
L(3dB)
= 50 V; I
001aaf059
= 61.0 dBm (1260 W)
= 61.4 dBm (1400 W)
Z
drain
L
Dq
36
= 40 mA; f = 225 MHz; t
Z
Ω
3.7 − j0.2
L
Power LDMOS transistor
ideal P
(1)
38
L
P
P
L
© NXP B.V. 2010. All rights reserved.
s
(dBm)
001aak927
BLF578
p
= 100 μs;
(2)
40
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