BLF578,112 NXP Semiconductors, BLF578,112 Datasheet - Page 8

• Manufacturer Part Number: BLF578,112
• Description: TRANSISTOR PWR LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF578,112

• Transistor Type: LDMOS
• Frequency: 108MHz
• Gain: 26dB
• Voltage - Rated: 110V
• Current Rating: 88A
• Current - Test: 40mA
• Voltage - Test: 50V
• Power - Output: 1000W
• Package / Case: SOT539A
• Application: HF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 88A
• Drain Source Voltage (max): 110V
• Output Power (max): 1200W
• Power Gain (typ)@vds: 26@50V/24@50VdB
• Frequency (max): 225MHz
• Package Type: LDMOST
• Pin Count: 5
• Drain Source Resistance (max): 70(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 403@50VpF
• Output Capacitance (typ)@vds: 138@50VpF
• Reverse Capacitance (typ): 3@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 71%
• Mounting: Screw
• Mode Of Operation: CW/Pulsed RF
• Number Of Elements: 2
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5103-5; 934063155112; BLF578,112

NXP Semiconductors
BLF578_2
Product data sheet
Fig 11. Class-AB common-source production test circuit
Fig 12. Component layout for class-AB production test circuit
input
50 Ω
R1
R2
C5
C4
See
C1
See
C2
C3
C1
C2
C5
C6
C3
C4
V
V
GG
GG
Table 9
Table 9
C6
R1
R2
L3
8.3 Test circuit
for a list of components.
for a list of components.
C7
C8
T1
T1
C7
C8
C9
C9
C10
C10
L4
L5
Rev. 02 — 4 February 2010
C11
C12
C11
C12
L6
L7
R3
R4
R3
R4
L8
L9
C13
C14
C15
C14
C13
C15
L10
L11
C16
C17
C18
C16 C18 C20
C19
C17 C19
C20
C21
C22
T2
Power LDMOS transistor
T2
C21
C22
L12
© NXP B.V. 2010. All rights reserved.
R5
R6
BLF578
C23
V
V
DD
DD
001aaj124
C25
C28
C24
C23
C27
C26
L2
L1
C26
C25
C28
C24
C27
L1
L2
001aaj123
R5
R6
output
50 Ω
8 of 14