BLF888,112 NXP Semiconductors, BLF888,112 Datasheet - Page 4

• Manufacturer Part Number: BLF888,112
• Description: TRANSISTOR RF PWR LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF888,112

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 104V
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: SOT979A
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 104V
• Output Power (max): 250W(Min)
• Power Gain (typ)@vds: 19@50VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 17S
• Drain Source Resistance (max): 105(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 205@50VpF
• Output Capacitance (typ)@vds: 65@50VpF
• Reverse Capacitance (typ): 2.2@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 46%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/DVB-T
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5102-5; 934062101112; BLF888,112

NXP Semiconductors
Table 7.
T
[1]
[2]
BLF888
Product data sheet
Symbol

IMD
PAR
h
D
= 25
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
shldr

C unless otherwise specified.
RF characteristics
Parameter
drain efficiency
intermodulation distortion shoulder
peak-to-average ratio
6.1 Ruggedness in class-AB operation
The BLF888 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: V
power. Ruggedness is measured in the application circuit as described in
Fig 1.
…continued
V
Output capacitance as a function of drain-source voltage; typical values per
section; capacitance value without internal matching
GS
= 0 V; f = 1 MHz.
All information provided in this document is subject to legal disclaimers.
C
(pF)
oss
Rev. 5 — 21 January 2011
250
200
150
100
50
0
Conditions
20
40
DS
V
= 50 V; f = 860 MHz at rated
DS
001aaj274
(V)
UHF power LDMOS transistor
[1]
[2]
60
Min
28
-
-
Typ
31
31
8.3
© NXP B.V. 2011. All rights reserved.
BLF888
Section
Max
-
28
-
8.
Unit
%
dBc
dB
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